Fabrication of ordered Fe-Ni nitride film with equiatomic Fe/Ni ratio

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Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

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Investigation of current injection in β-FeSi2/Si double-heterostructures light-emitting diodes by molecular beam epitaxy

The p-Si/p-β-FeSi2/p-Si/n-Si light-emitting diode (LED) was fabricated by molecular beam epitaxy (MBE) on Si (111) substrates. Compared to our previous p-Si/p-β-FeSi2/n-Si double-heterostructures (DH) LED, the turn-on voltage in the current-voltage (I-V) characteristics increased by approximately 0.2 V, meaning that defect densities at around the p-n junction was reduced. However, Si-related EL (1.05 eV) became dominant unexpectedly, and thus EL of β-FeSi2 was suppressed accordingly. The origin of the luminescence is considered to be transitions via defect levels (1.05 eV) being due probably to Fe-B complex

Room-temperature electroluminescence of a Si-based p-i-n diode with beta-FeSi2 particles embedded in the intrinsic silicon

A Si-based p-i-n light emitting diode for 1.6 µm operation at room temperature has been realized, with beta-FeSi2 particles embedded in the unintentionally doped Si prepared by reactive deposition epitaxy. Room-temperature electroluminescence (EL) at 1.6 µm was observed with the diode under a forward bias current density of about 2.0 A/cm2 and its intensity increased linearly with the current density. The temperature dependence of EL showed that luminescence was due to interband transitions in the beta-FeSi2 particles and the loss of electron confinement at p-p beta-FeSi2/Si heterojunctions follows a thermally activated process with activation energy of about 0.198 eV, the conduction band offset at beta-FeSi2/Si heterojunction

Large grain-sized FeSi2 films by micro-channel epitaxy for infrared detectors

科学研究費助成事業(科学研究費補助金)研究成果報告書：基盤研究(B)2009-2011課題番号：2136000

Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

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Growth of highly oriented crystalline α-Fe/AlN/Fe3N trilayer structures on Si(1 1 1) substrates by molecular beam epitaxy

We have realized highly oriented nitride-based α-Fe/AlN/Fe3N ferromagnetic hybrid structures on Si(1 1 1) substrates by molecular beam epitaxy using AlN/SiC intermediate layers. A two-step hysteresis loop, typically observed in magnetic tunneling junctions, was clearly observed in magnetization versus magnetic field measurements. This result indicates the formation of ferromagnetic α-Fe and Fe3N layers separated by 8-nm-thick AlN layers over approximately 1 cm2 area, and also shows the difference in coercive field between the two ferromagnetic layers

Energetic stability and magnetic moment of tri-, tetra-, and octa- ferromagnetic element nitrides predicted by first-principle calculations

Formation energies and magnetic moments of tri-, tetra-, and octa- ferromagnetic element nitrides have been calculated using spin-polarized Perdew–Wang generalized gradient approximations of the density functional theory. From the energetic point of view, Fe4N are more stable compared to Fe and N2 gas. Ni4N may be a metastable phase since mixture of Ni3N and Ni would be more energetically stable. Fe4N may be also a metastable from energetic point of view but effect of configurational entropy caused by N-vacancy and of disregarded random occupation of interstitial sites by N observed in Fe3N must be evaluated so as to make precise evaluation, which is beyond the scope of the present work. Co4N are not stable compared to Co metal with the hcp structure and N2 gas, but more stable in case Co metal with the fcc structure is used as a reference state. Only Fe8N with the α″-Fe16N2 type structure would be stable among octa-metal nitrides with the assumed structure of the α″-Fe16N2 type and the Ni32N4 type structure. All of Fe3N, Co3N, and Ni3N are stable, but Ni3N would be non-magnetic in contrast to ferromagnetism of other tri-metal nitrides

Growth of Si/beta-FeSi2/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

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