Measurement of minority carrier transport parameters in heavily doped n-type silicon

Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region

Measurement of carrier transport and recombination parameter in heavily doped silicon

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si

The stability of an air-maintained cavity behind a stationary object in flowing water

In studies made in the Free Surface Water Tunnel of a projectile running in an air-maintained cavity, the experimental relation between air entrainment rate and cavitation number was determined. The entrainment-rate coefficient CQ = Q/V0d^2, where Q is the air rate in cfs, V0 the free-stream velocity, and d the disk nose diameter, was plotted against cavitation parameter, K = (p0 - pk)/q0 where p0 is the free-stream pressure at the disk center line, pk the cavity pressure, and q0 the free-stream dynamic pressure. This experimental relationship for one single disc is shown for three different velocities in Fig. 1. The curves are similar in shape and each has a minimum value of entrainment coefficient which is designated by CQ^* at a value of K as designated as K^*

Combinatorial Solutions Providing Improved Security for the Generalized Russian Cards Problem

We present the first formal mathematical presentation of the generalized Russian cards problem, and provide rigorous security definitions that capture both basic and extended versions of weak and perfect security notions. In the generalized Russian cards problem, three players, Alice, Bob, and Cathy, are dealt a deck of $n$ cards, each given $a$, $b$, and $c$ cards, respectively. The goal is for Alice and Bob to learn each other's hands via public communication, without Cathy learning the fate of any particular card. The basic idea is that Alice announces a set of possible hands she might hold, and Bob, using knowledge of his own hand, should be able to learn Alice's cards from this announcement, but Cathy should not. Using a combinatorial approach, we are able to give a nice characterization of informative strategies (i.e., strategies allowing Bob to learn Alice's hand), having optimal communication complexity, namely the set of possible hands Alice announces must be equivalent to a large set of $t-(n, a, 1)$-designs, where $t=a-c$. We also provide some interesting necessary conditions for certain types of deals to be simultaneously informative and secure. That is, for deals satisfying $c = a-d$ for some $d \geq 2$, where $b \geq d-1$ and the strategy is assumed to satisfy a strong version of security (namely perfect $(d-1)$-security), we show that $a = d+1$ and hence $c=1$. We also give a precise characterization of informative and perfectly $(d-1)$-secure deals of the form $(d+1, b, 1)$ satisfying $b \geq d-1$ involving $d-(n, d+1, 1)$-designs

Parity Symmetry in QED3

Schwinger-Dyson equations are used to study spontaneous chiral and parity symmetry breaking of three dimensional quantum electrodynamics with two-component fermions. This theory admits a topological photon mass that explicitly breaks parity symmetry and generates a fermion mass. We show that the pattern of symmetry breaking maintains parity but breaks chiral symmetry. We also find that chiral symmetry is restored at a critical number of fermion flavours in our truncation scheme. The Coleman-Hill theorem is used to demonstrate that the results are reasonably accurate.Comment: 11 pages, 5 figure

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities

High Lifetime Solar Cell Processing and Design

In order to maximize efficiency a solar cell must: (1) absorb as much light as possible in electron-hole production, (2) transport as large a fraction as possible of the electrons to the n-type terminal and holes to the p-type terminal without their first recombining, and (3) produce as high as possible terminal voltage. Step (1) is largely fixed by the spectrum of sunlight and the fundamental absorption characteristics of silicon, although some improvements are possible through texturizing induced light trapping and back surface reflectors. Steps (2) and (3) are, however, dependent on the recombination mechanisms of the cell. The recombination, on the contrary, is strongly influenced by cell processing and design. Some of the lessons during the development of point-contact-cell are discussed. Cell dependence on recombination, surface recombination, and contact recombination are discussed. Results show the overwhelming influence of contact recombination on the operation of the cell when the other sources of recombination are reduced by careful processing

A constitutive model for an overlay coating

Coatings are frequently applied to gas turbine blades and vanes to provide protection against oxidation and corrosion. The results of an experimental and analytical study to develop a constitutive model for an overlay coating is presented. Specimens were machined from a hot isostatically pressed billet of PWA 286. The tests consisted of isothermal stress relaxation cycles with monotonically increasing maximum strain and were conducted at various temperatures. The results were used to calculate the constants for various constitutive models, including the classical, the Walker isotropic, a simplified Walker, and Stowell models. A computerized regression analysis was used to calculate model constants from the data. The best fit was obtained for the Walker model, with the simplified Walker and classical models close behind

Node synchronization schemes for the Big Viterbi Decoder

The Big Viterbi Decoder (BVD), currently under development for the DSN, includes three separate algorithms to acquire and maintain node and frame synchronization. The first measures the number of decoded bits between two consecutive renormalization operations (renorm rate), the second detects the presence of the frame marker in the decoded bit stream (bit correlation), while the third searches for an encoded version of the frame marker in the encoded input stream (symbol correlation). A detailed account of the operation is given, as well as performance comparison, of the three methods