Fano-Kondo interplay in a side-coupled double quantum dot

We investigate low-temperature transport characteristics of a side-coupled double quantum dot where only one of the dots is directly connected to the leads. We observe Fano resonances, which arise from interference between discrete levels in one dot and the Kondo effect, or cotunneling in general, in the other dot, playing the role of a continuum. The Kondo resonance is partially suppressed by destructive Fano interference, reflecting novel Fano-Kondo competition. We also present a theoretical calculation based on the tight-binding model with slave boson mean field approximation, which qualitatively reproduces the experimental findings.Comment: 4 pages, 4 figure

Collapse of thermal activation in moderately damped Josephson junctions

We study switching current statistics in different moderately damped Josephson junctions: a paradoxical collapse of the thermal activation with increasing temperature is reported and explained by interplay of two conflicting consequences of thermal fluctuations, which can both assist in premature escape and help in retrapping back into the stationary state. We analyze the influence of dissipation on the thermal escape by tuning the damping parameter with a gate voltage, magnetic field, temperature and an in-situ capacitor.Comment: 4 pages, 4 figure

Landau Cooling in Metal-Semiconductor Nanostructures

An electron-cooling principle based on Landau quantization is proposed for nanoscale conductor systems. Operation relies on energy-selective electron tunneling into a two-dimensional electron gas in quantizing magnetic fields. This quantum refrigerator provides significant cooling power (~1 nW at a few K for realistic parameters) and offers a unique flexibility thanks to its tunability via the magnetic-field intensity. The available performance is only marginally affected by nonidealities such as disorder or imperfections in the semiconductor. Methods for the implementation of this system and its characterization are discussed.Comment: 4 pages, 4 color figure

Spectroscopy of SrRuO/Ru Junctions in Eutectic

We have investigated the tunnelling properties of the interface between superconducting Sr2RuO4 and a single Ru inclusion in eutectic. By using a micro-fabrication technique, we have made Sr2RuO4/Ru junctions on the eutectic system that consists of Sr2RuO4 and Ru micro-inclusions. Such a eutectic system exhibits surface superconductivity, called the 3-K phase. A zero bias conductance peak (ZBCP) was observed in the 3-K phase. We propose to use the onset of the ZBCP to delineate the phase boundary of a time-reversal symmetry breaking state.Comment: To be published in Proc of 24th Int. Conf. on Low Temperature Physics (LT24); 2 page

Non-local Control of the Kondo Effect in a Double Quantum Dot-Quantum Wire Coupled System

We have performed low-temperature transport measurements on a double quantum dot-quantum wire coupled device and demonstrated non-local control of the Kondo effect in one dot by manipulating the electronic spin states of the other. We discuss the modulation of the local density of states in the wire region due to the Fano-Kondo antiresonance, and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) exchange interaction as the mechanisms responsible for the observed features.Comment: 4 pages, 4 figure

A Cooper pair light emitting diode

We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication band. Cooper pairs are the condensation of electrons at a spin-singlet quantum state and this condensation leads to the observed enhancement of the electric-dipole transitions. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.Comment: 5 pages (4 figures

Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas

By measuring the photoluminescence linewidth of a GaAs quantum well under perpendicular electric fields, we have traced the variation of the effective radius a* of a charged exciton (trion) as a function of electron density. The a* increases sharply above a critical density ns=2×1014 m−2, which is consistent with the decrease of the screening length predicted by nonlinear-screening theory. Our analysis shows that the crossover from trions to the two-dimensional electron gas plus hole is generated by Coulomb screening in the high-electron-density regime, eliminating the possible mechanism by the trion localization effect due to the single-electron localization

Exchange energy enhanced g-factors obtained from Landau fan diagrams at low magnetic fields

We report on measurement of the electron-hole effective g-factors (geff*) depending on electron filling factors ν from magnetophotoluminescence spectroscopy at low magnetic fields B<1 T in low electron density regime in a GaAs/Al0.33Ga0.67As-gated quantum well. Enhancement of geff* at odd ν is observed. The oscillatory behavior of geff* is compared with results of a theory that takes into account the lowest-order exchange interaction of the screened Coulomb interaction. Good agreement of the observed geff* with theoretical results is obtained except ν at around 3. The enhancement of geff* at even ν with decrease in electron density has not been observed

Evidence of a Transition from Nonlinear to Linear Screening of a Two-Dimensional Electron System Detected by Photoluminescence Spectroscopy

We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole