Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1−xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature

Exciton dephasing and biexciton binding in CdSe/ZnSe islands

The dephasing of excitons and the formation of biexcitons in self-organized CdSe/ZnSe islands grown by molecular-beam epitaxy is investigated using spectrally resolved four-wave mixing. A distribution of exciton-exciton scattering efficiencies and dephasing times in the range of 0.5–10 ps are observed. This indicates the presence of differently localized exciton states at comparable transition energies. Polarization-dependent measurements identify the formation of biexcitons with a biexciton binding energy of more than four times the bulk value. With decreasing exciton energy, the binding energy slightly increases from 21.5 to 23 meV, while its broadening decreases from 5.5 to 3 meV. This is attributed to a strong three-dimensional confinement with improving shape uniformity for decreasing exciton energy

Localization-enhanced biexciton binding in semiconductors

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1−xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton

AIBA: An AI Model for Behavior Arbitration in Autonomous Driving

Driving in dynamically changing traffic is a highly challenging task for autonomous vehicles, especially in crowded urban roadways. The Artificial Intelligence (AI) system of a driverless car must be able to arbitrate between different driving strategies in order to properly plan the car's path, based on an understandable traffic scene model. In this paper, an AI behavior arbitration algorithm for Autonomous Driving (AD) is proposed. The method, coined AIBA (AI Behavior Arbitration), has been developed in two stages: (i) human driving scene description and understanding and (ii) formal modelling. The description of the scene is achieved by mimicking a human cognition model, while the modelling part is based on a formal representation which approximates the human driver understanding process. The advantage of the formal representation is that the functional safety of the system can be analytically inferred. The performance of the algorithm has been evaluated in Virtual Test Drive (VTD), a comprehensive traffic simulator, and in GridSim, a vehicle kinematics engine for prototypes.Comment: 12 page