4,454 research outputs found
Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator
We demonstrate the coupling of rare-earth ions locally implanted in a
substrate (Gd in AlO) to a superconducting NbN
lumped-element micro-resonator. The hybrid device is fabricated by a controlled
ion implantation of rare-earth ions in well-defined micron-sized areas, aligned
to lithographically defined micro-resonators. The technique does not degrade
the internal quality factor of the resonators which remain above .
Using microwave absorption spectroscopy we observe electron-spin resonances in
good agreement with numerical modelling and extract corresponding coupling
rates of the order of MHz and spin linewidths of MHz.Comment: 4 pages, 2 Figure
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Soil pH governs production rate of calcium carbonate secreted by the earthworm Lumbricus terrestris
Lumbricus terrestris earthworms exposed to 11 soils of contrasting properties produced, on average, 0.8 ± 0.1 mgCaCO3 earthworm−1 day−1 in the form of granules up to 2 mm in diameter. Production rate increased with soil pH (r2 = 0.68, p < 0.01). Earthworms could be a significant source of calcite in soils
Highly conductive Sb-doped layers in strained Si
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device
Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd3+:Al2O3
Interfacing rare-earth-doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here, we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd3+ in Al2O3 spin system coupled to a superconducting microresonator. We investigate the properties of the implanted spin system through angular-dependent microresonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high-energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modeled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites while maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our microresonator, emphasizing the need for controllable local implantation
Multi-centre reproducibility of diffusion MRI parameters for clinical sequences in the brain.
The purpose of this work was to assess the reproducibility of diffusion imaging, and in particular the apparent diffusion coefficient (ADC), intra-voxel incoherent motion (IVIM) parameters and diffusion tensor imaging (DTI) parameters, across multiple centres using clinically available protocols with limited harmonization between sequences. An ice-water phantom and nine healthy volunteers were scanned across fives centres on eight scanners (four Siemens 1.5T, four Philips 3T). The mean ADC, IVIM parameters (diffusion coefficient D and perfusion fraction f) and DTI parameters (mean diffusivity MD and fractional anisotropy FA), were measured in grey matter, white matter and specific brain sub-regions. A mixed effect model was used to measure the intra- and inter-scanner coefficient of variation (CV) for each of the five parameters. ADC, D, MD and FA had a good intra- and inter-scanner reproducibility in both grey and white matter, with a CV ranging between 1% and 7.4%; mean 2.6%. Other brain regions also showed high levels of reproducibility except for small structures such as the choroid plexus. The IVIM parameter f had a higher intra-scanner CV of 8.4% and inter-scanner CV of 24.8%. No major difference in the inter-scanner CV for ADC, D, MD and FA was observed when analysing the 1.5T and 3T scanners separately. ADC, D, MD and FA all showed good intra-scanner reproducibility, with the inter-scanner reproducibility being comparable or faring slightly worse, suggesting that using data from multiple scanners does not have an adverse effect compared with using data from the same scanner. The IVIM parameter f had a poorer inter-scanner CV when scanners of different field strengths were combined, and the parameter was also affected by the scan acquisition resolution. This study shows that the majority of diffusion MRI derived parameters are robust across 1.5T and 3T scanners and suitable for use in multi-centre clinical studies and trials
Measurement of the cross-section and charge asymmetry of bosons produced in proton-proton collisions at TeV with the ATLAS detector
This paper presents measurements of the and cross-sections and the associated charge asymmetry as a
function of the absolute pseudorapidity of the decay muon. The data were
collected in proton--proton collisions at a centre-of-mass energy of 8 TeV with
the ATLAS experiment at the LHC and correspond to a total integrated luminosity
of 20.2~\mbox{fb^{-1}}. The precision of the cross-section measurements
varies between 0.8% to 1.5% as a function of the pseudorapidity, excluding the
1.9% uncertainty on the integrated luminosity. The charge asymmetry is measured
with an uncertainty between 0.002 and 0.003. The results are compared with
predictions based on next-to-next-to-leading-order calculations with various
parton distribution functions and have the sensitivity to discriminate between
them.Comment: 38 pages in total, author list starting page 22, 5 figures, 4 tables,
submitted to EPJC. All figures including auxiliary figures are available at
https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/STDM-2017-13
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