Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth.D.M. is supported by an Australian Research Council QEII Fellowship. The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at UNSW is funded by the Australian Research Council

Theory of inter-edge superexchange in zigzag edge magnetism

A graphene nanoribbon with zigzag edges has a gapped magnetic ground state with an antiferromagnetic inter-edge superexchange interaction. We present a theory based on asymptotic properties of the Dirac-model ribbon wavefunction which predicts $W^{-2}$ and $W^{-1}$ ribbon-width dependencies for the superexchange interaction strength and the charge gap respectively. We find that, unlike the case of conventional atomic scale superexchange, opposite spin-orientations on opposite edges of the ribbon are favored by both kinetic and interaction energies.Comment: 4 pages 8 figure

Competing Ordered States in Bilayer Graphene

We use a perturbative renormalization group approach with short-range continuum model interactions to analyze the competition between isotropic gapped and anisotropic gapless ordered states in bilayer graphene, commenting specifically on the role of exchange and on the importance of spin and valley flavor degeneracy. By comparing the divergences of the corresponding susceptibilities, we conclude that this approach predicts gapped states for flavor numbers N=1,2,4. We also comment briefly on the related gapped states expected in chiral (ABC) trilayer graphene.Comment: 12 pages, 7 figures and 1 tabl

Artinian and non-artinian local cohomology modules

Let $M$ be a finite module over a commutative noetherian ring $R$. For ideals \fa and \fb of $R$, the relations between cohomological dimensions of $M$ with respect to \fa, \fb, \fa\cap\fb and \fa+ \fb are studied. When $R$ is local, it is shown that $M$ is generalized Cohen-Macaulay if there exists an ideal \fa such that all local cohomology modules of $M$ with respect to \fa have finite lengths. Also, when $r$ is an integer such that $0\leq r< \dim_R(M)$, any maximal element \fq of the non-empty set of ideals \{\fa : \H_\fa^i(M) is not artinian for some $i$, $i\geq r$$\}$ is a prime ideal and that all Bass numbers of \H_\fq^i(M) are finite for all $i\geq r$.Comment: 10 pages, to appear in Canadian Mathematical Bulleti

Theory of Weak Localization in Ferromagnetic (Ga,Mn)As

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn concentrations above 1% quantum interference corrections lead to negative magnetoresistance, i.e. to weak localization (WL) rather than weak antilocalization (WAL). Our work highlights key qualitative differences between (Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanism by which exchange splitting in the ferromagnetic state converts valence band WAL into WL. We comment on recent experimental studies and theoretical analyses of low-temperature magnetoresistance in (Ga,Mn)As which have been variously interpreted as implying both WL and WAL and as requiring an impurity-band interpretation of transport in metallic (Ga,Mn)As.Comment: 16 pages, 10 figures; submitted to Phys. Rev.

Magneto-electric coupling in zigzag graphene nanoribbons

Zigzag graphene nanoribbons can have magnetic ground states with ferromagnetic, antiferromagnetic, or canted configurations, depending on carrier density. We show that an electric field directed across the ribbon alters the magnetic state, favoring antiferromagnetic configurations. This property can be used to prepare ribbons with a prescribed spin-orientation on a given edge.Comment: 4 pages, 5 figure