12,507 research outputs found
Constituent quark model for nuclear stopping in high energy nuclear collisions
We study the nuclear stopping in high energy nuclear collisions using the
constituent quark model. It is assumed that wounded nucleons with different
number of interacted quarks hadronize in different ways. The probabilities of
having such wounded nucleons are evaluated for proton-proton, proton-nucleus
and nucleus-nucleus collisions. After examining our model in proton-proton and
proton-nucleus collisions and fixing the hadronization functions, it is
extended to nucleus-nucleus collisions. It is used to calculate the rapidity
distribution and the rapidity shift of final state protons in nucleus-nucleus
collisions. The computed results are in good agreement with the experimental
data on ^{32}\mbox{S} +\ ^{32}\mbox{S} at AGeV and
^{208}\mbox{Pb} +\ ^{208}\mbox{Pb} at AGeV. Theoretical
predictions are also given for proton rapidity distribution in ^{197}\mbox{Au}
+\ ^{197}\mbox{Au} at AGeV (BNL-RHIC). We predict that the
nearly baryon free region will appear in the midrapidity region and the
rapidity shift is .Comment: 40 pages, 16 Postscript figures, submitted to Phys. Rev.
Imaging ambipolar two-dimensional carriers induced by the spontaneous electric polarization of a polar semiconductor BiTeI
Two-dimensional (2D) mobile carriers are a wellspring of quantum phenomena.
Among various 2D-carrier systems, such as field effect transistors and
heterostructures, polar materials hold a unique potential; the spontaneous
electric polarization in the bulk could generate positive and negative 2D
carriers at the surface. Although several experiments have shown ambipolar
carriers at the surface of a polar semiconductor BiTeI, their origin is yet to
be specified. Here we provide compelling experimental evidences that the
ambipolar 2D carriers at the surface of BiTeI are induced by the spontaneous
electric polarization. By imaging electron standing waves with spectroscopic
imaging scanning tunneling microscopy, we find that positive or negative
carriers with Rashba-type spin splitting emerge at the surface correspondingly
to the polar directions in the bulk. The electron densities at the surface are
constant independently of those in the bulk, corroborating that the 2D carriers
are induced by the spontaneous electric polarization. We also successfully
image that lateral - junctions are formed along the boundaries of
submicron-scale domains with opposite polar directions. Our study presents a
novel means to endow non-volatile, spin-polarized, and ambipolar 2D carriers as
well as, without elaborate fabrication, lateral - junctions of those
carriers at atomically-sharp interfaces.Comment: 23 pages, 8 figure
Toward a Neutrino Mass Matrix
One may identify the general properties of the neutrino mass matrix by
generating many random mass matrices and testing them against the results of
the neutrino experiments.Comment: 3 pages, 1 figure, talk at DPF200
An efficient control of Curie temperature in Ni-Mn-Ga alloys
We have studied the influence of alloying with a fourth element on the
temperature of ferromagnetic ordering in Ni-Mn-Ga Heusler alloys. It is
found that increases or decreases, depending on the substitution. The
increase of is observed when Ni is substituted by either Fe or Co. On the
contrary, the substitution of Mn for V or Ga for In strongly reduces .Comment: presented at ICM-200
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