Application of single-electron effects to fingerprints of chips using image recognition algorithms

Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not controllable; therefore, different current--voltage characteristics are observed through traps even in silicon transistors having the same device parameters (e.g., gate length). This allows us to use single-electron effects as fingerprints of chips. In this study, we analyze the single-electron effect of traps in conventional silicon transistors and show the possibility of their use as fingerprints of chips through image recognition algorithms. Resonant tunneling parts in the Coulomb diagram can also be used to characterize each device. These results show that single-electron effects can provide a quantum version of a physically unclonable function (quantum-PUF).Comment: 5 pages, 8 figure

Effects of interface electric field on the magnetoresistance in spin device

An extension of the standard spin diffusion theory is presented by introducing a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.Comment: 5 pages, 3 figure

Fano-Kondo effect in a two-level system with triple quantum dots: shot noise characteristics

We theoretically compare transport properties of Fano-Kondo effect with those of Fano effect. We focus on shot noise characteristics of a triple quantum dot (QD) system in the Fano-Kondo region at zero temperature, and discuss the effect of strong electric correlation in QDs. We found that the modulation of the Fano dip is strongly affected by the on-site Coulomb interaction in QDs.Comment: 4 pages, 6figure

Dispersion of Magnetic Excitations in Superconducting Optimally Doped YBa_2Cu_3O_6.95

Detailed neutron scattering measurements of YBa_2Cu_3O_6.95 found that the resonance peak and incommensurate magnetic scattering induced by superconductivity represent the same physical phenomenon: two dispersive branches that converge near 41 meV and the in-plane wave-vector q_af=(pi/a, pi/a) to form the resonance peak. One branch has a circular symmetry around q_af and quadratic downward dispersion from ~41 meV to the spin gap of 33+-1meV. The other, of lower intensity, disperses from ~41 meV to at least 55 meV. Our results exclude a quartet of vertical incommensurate rods in q-w space expected from spin waves produced by dynamical charge stripes as an origin of the observed incommensurate scattering in optimally-doped YBCO.Comment: Version 3: Author change. Changes made throughout the text and minor changes in figures, Model parameters slightly changed after a small error in the calculation was discovere

On the Magnetic Excitation Spectra of High Tc Cu Oxides up to the Energies far above the Resonance Energy

Magnetic excitation spectra c"(q,w) of YBa2Cu3Oy and La214 systems have been studied. For La1.88Sr0.12CuO4, c"(q,w) have been measured up to ~30 meV and existing data have been analyzed up to the energy w~150 meV by using the phenomenological expression of the generalized magnetic susceptibility c(q,w)=c0(q,w)/{1+J(q)c0(q,w)}, where c0(q,w) is the susceptibility of the electrons without the exchange coupling J(q) among them. In the relatively low energy region up to slightly above the resonance energy Er, it has been reported by the authors' group that the expression can explain characteristics of the q- and w-dependence of the spectra of YBa2Cu3Oy (YBCO or YBCOy). Here, it is also pointed out that the expression can reproduce the rotation of four incommensurate peaks of c"(q,w) within the a*-b* plane about (p/a, p/a) {or so-called (p, p)} point by 45 degree, which occurs as w goes to the energy region far above Er from E below Er. For La2-xSrxCuO4 and La2-xBaxCuO4, agreements between the observed results and the calculations are less satisfactory than for YBCO, indicating that we have to take account of the existence of the "stripes" to consistently explain the observed c"(q,w) of La214 system especially near x=1/8.Comment: 14 pages, 5 figure

Perturbation study on the spin and charge susceptibilities of the two-dimensional Hubbard model

We investigate the spin and charge susceptibilities of the two-dimensional Hubbard model based upon the perturbative calculation in the strength of correlation $U$. For $U$ comparable to a bare bandwidth, the charge susceptibility decreases near the half-filling as hole-doping approaches zero. This behavior suggesting the precursor of the Mott-Hubbard gap formation cannot be obtained without the vertex corrections beyond the random phase approximation. In the low-temperature region, the spin susceptibility deviates from the Curie-Weiss-like law and finally turns to decrease with the decrease of temperature. This spin-gap-like behavior is originating from the van Hove singularity in the density of states.Comment: Revtex file + 11 figures, to appear in Phys. Rev.

Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET

Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically benchmarked with CMOS FPGA for 22nm, 32nm and 45nm technologies including 20% transistor size variation. We show that area is reduced and speed is increased in spin FPGA owing to the nonvolatile memory function of spin MOSFET.Comment: 3 pages, 7 figure

Pseudo-gap behavior in dynamical properties of high-Tc cuprates

Dynamical properties of 2D antiferromagnets with hole doping are investigated to see the effects of short range local magnetic order on the temperature dependence of the dynamical magnetic susceptibility. We show the pseudo-gap like behavior of the temperature dependence of the NMR relaxation rate. We also discuss implications of the results in relations to the observed spin gap like behavior of low-doped copper oxide high-$T_c$ superconductors.Comment: 3 pages, Revtex, with 2 eps figures, to appear in J.Phys.Soc.Jpn. Vol.67 No.