A Compact Source for Quantum Image Processing with Four-wave Mixing in Rubidium-85

We have built a compact light source for bright squeezed twin-beams at 795\,nm based on four-wave-mixing in atomic $^{85}$Rb vapor. With a total optical power of 400\,mW derived from a free running diode laser and a tapered amplifier to pump the four-wave-mixing process, we achieve 2.1\,dB intensity difference squeezing of the twin beams below the standard quantum limit, without accounting for losses. Squeezed twin beams generated by the type of source presented here could be used as reference for the precise calibration of photodetectors. Transferring the quantum correlations from the light to atoms in order to generate correlated atom beams is another interesting prospect. In this work we investigate the dispersion that is generated by the employed four-wave-mixing process with respect to bandwidth and dependence on probe detuning. We are currently using this squeezed light source to test the transfer of spatial information and quantum correlations through media of anomalous dispersion.Comment: 6 pages, 4 figure

Stimulated generation of superluminal light pulses via four-wave mixing

We report on the four-wave mixing of superluminal pulses, in which both the injected and generated pulses involved in the process propagate with negative group velocities. Generated pulses with negative group velocities of up to $v_{g}=-1/880c$ are demonstrated, corresponding to the generated pulse's peak exiting the 1.7\,cm long medium $\approx50$\,ns earlier than if it had propagated at the speed of light in vacuum, $c$. We also show that in some cases the seeded pulse may propagate with a group velocity larger than $c$, and that the generated conjugate pulse peak may exit the medium even earlier than the amplified seed pulse peak. We can control the group velocities of the two pulses by changing the seed detuning and the input seed power.Comment: 5 pages, 4 figure

Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor wave function is strongly anisotropic in space and its detailed features depend on the depth of the sublayer in which the Mn atom is located. The local-density-of-states (LDOS) on the (110) surface associated with the acceptor level is more sensitive to the direction of the Mn magnetic moment when the Mn atom is located further below the surface. We show that the total magnetic anisotropy energy of the system is due almost entirely to the dependence of the acceptor level energy on Mn spin orientation, and that this quantity is strongly dependent on the depth of the Mn atom.Comment: 14 pages, 13 figure

Magnetic interactions of substitutional Mn pairs in GaAs

We employ a kinetic-exchange tight-binding model to calculate the magnetic interaction and anisotropy energies of a pair of substitutional Mn atoms in GaAs as a function of their separation distance and direction. We find that the most energetically stable configuration is usually one in which the spins are ferromagnetically aligned along the vector connecting the Mn atoms. The ferromagnetic configuration is characterized by a splitting of the topmost unoccupied acceptor levels, which is visible in scanning tunneling microscope studies when the pair is close to the surface and is strongly dependent on pair orientation. The largest acceptor splittings occur when the Mn pair is oriented along the symmetry direction, and the smallest when they are oriented along . We show explicitly that the acceptor splitting is not simply related to the effective exchange interaction between the Mn local moments. The exchange interaction constant is instead more directly related to the width of the distribution of all impurity levels -- occupied and unoccupied. When the Mn pair is at the (110) GaAs surface, both acceptor splitting and effective exchange interaction are very small except for the smallest possible Mn separation.Comment: 25 figure

Fractional quantum Hall effect in CdTe

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.Comment: Submitte

Prozessqualität im Wandel: Beobachtungen am Beispiel der Bio-Wertschöpfungskette in Österreich

Initially, organic farming claims to take care of ecological, economic, social, political as well as ethical aspects alongside the supply chain. Current dynamics in the Austrian organic farming sector endanger the achievement of these process quality aims. A number of measures have to be taken to keep these aims as they seem to be essential for the prosperity and viability of the organic farming sector in the long run