Traitement et réinsertion des délinquants mineurs

departmental bulletin pape

Control of plasma profile in microwave discharges via inverse-problem approach

In the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of high density, low temperature, large diameter, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and the research target is a spatial profile control. Two novel techniques are introduced to control the uniformity; one is a segmented slot antenna that can change radial distribution of the radiated field during operation, and the other is a hyper simulator that can predict microwave power distribution necessary for a desired radial density profile. The control system including these techniques provides a method of controlling radial profiles of the microwave plasma via inverse-problem approach, and is investigated numerically and experimentally

Exact Flow Analysis by Higher-Order Model Checking

Abstract. We propose a novel control flow analysis for higher-order functional programs, based on a reduction to higher-order model check-ing. The distinguished features of our control flow analysis are that, un-like most of the control flow analyses like k-CFA, it is exact for simply-typed λ-calculus with recursion and finite base types, and that, unlike Mossin’s exact flow analysis, it is indeed runnable in practice, at least for small programs. Furthermore, under certain (arguably strong) assump-tions, our control flow analysis runs in time cubic in the size of a program. We formalize the reduction of control flow analysis to higher-order model checking, prove the correctness, and report preliminary experiments.