Time-to-digital converter card for multichannel time-resolved single-photon counting applications

We present a high performance Time-to-Digital Converter (TDC) card that provides 10 ps timing resolution and 20 ps (rms) timing precision with a programmable full-scale-range from 160 ns to 10 mu s. Differential Non-Linearity (DNL) is better than 1.3% LSB (rms) and Integral Non-Linearity (INL) is 5 ps rms. Thanks to the low power consumption (400 mW) and the compact size (78 mm x 28 mm x 10 mm), this card is the building block for developing compact multichannel time-resolved instrumentation for Time-Correlated Single-Photon Counting (TCSPC). The TDC-card outputs the time measurement results together with the rates of START and STOP signals and the number of valid TDC conversions. These additional information are needed by many TCSPC-based applications, such as: Fluorescence Lifetime Imaging (FLIM), Time-of-Flight (TOF) ranging measurements, time-resolved Positron Emission Tomography (PET), single-molecule spectroscopy, Fluorescence Correlation Spectroscopy (FCS), Diffuse Optical Tomography (DOT), Optical Time-Domain Reflectometry (OTDR), quantum optics, etc

Low-cost and compact single-photon counter based on a CMOS SPAD smart pixel

We present a single-photon counter based on a silicon Single-Photon Avalanche Diode (SPAD) fabricated in a 0.35 μm CMOS technology. The detector is monolithically integrated with a front-end circuit and a digital pulse output driver. External components are kept to a minimum and the resulting instrument is low-cost, low-power and compact, being housed into an industry-standard 1-inch aluminum optical mounting tube. It features a maximum power consumption of just 250 mW from an USB link. The embedded 50 μm diameter SPAD has high photon detection efficiency in the visible range (55 % at 420 nm), low noise (< 100 cps at room temperature), low timing jitter (< 100 ps full-width at half maximum), and very low afterpulsing probability (down to 1 % with 60 ns hold-off time). The high performance, compactness and low cost enable many unexplored applications in life sciences, personal health care, industrial quality check, quantum physics and others, where it is required to count single photons and to measure their arrival time

Enhanced single-photon time-of-flight 3D ranging

We developed a system for acquiring 3D depth-resolved maps by measuring the Time-of-Flight (TOF) of single photons. It is based on a CMOS 32 × 32 array of Single-Photon Avalanche Diodes (SPADs) and 350 ps resolution Time-to-Digital Converters (TDCs) into each pixel, able to provide photon-counting or photon-timing frames every 10 μs. We show how such a system can be used to scan large scenes in just hundreds of milliseconds. Moreover, we show how to exploit TDC unwarping and refolding for improving signal-to-noise ratio and extending the full-scale depth range. Additionally, we merged 2D and 3D information in a single image, for easing object recognition and tracking

Anomalous Weak Values and the Violation of a Multiple-measurement Leggett-Garg Inequality

Quantum mechanics presents peculiar properties that, on the one hand, have been the subject of several theoretical and experimental studies about its very foundations and, on the other hand, provide tools for developing new technologies, the so-called quantum technologies. The nonclassicality pointed out by Leggett-Garg inequalities has represented, with Bell inequalities, one of the most investigated subject. In this letter we study the connection of Leggett-Garg inequalities with a new emerging field of quantum measurement, the weak values. In particular, we perform an experimental study of the four-time correlators Legget-Garg test, by exploiting single and sequential weak measurements performed on heralded single photons. We show violation of a four-parameters Leggett-Garg inequality in different experimental conditions, demonstrating an interesting connection between Leggett-Garg inequality violation and anomalous weak values

SPICE Electrical Models and Simulations of Silicon Photomultipliers

We present and discuss a comprehensive electrical model for Silicon Photomultipliers (SiPMs) based on a microcell able to accurately simulate the avalanche current build-up and the self-quenching of its Single-Photon Avalanche Diode (SPAD) “pixel” with series-connected quenching resistor. The entire SiPM is modeled either as an array of microcells, each one individually triggered by independent incoming photons, or as two macrocells, one with microcells all firing concurrently while the other one with all quiescent microcells; the most suitable approach depends on the light excitation conditions and on the dimension (i.e. number of microcells) of the overall SiPM. We validated both models by studying the behavior of SiPMs in different operating conditions, in order to study the effect of photons pile-up, the deterministic and statistical mismatches between microcells, the impact of the number of firing microcells vs. the total one, and the role of different microcell parameters on the overall SiPM performance. The electrical models were developed in SPICE and can simulate both custom-process and CMOS-compatible SiPMs, with either vertical or horizontal current-flow. The proposed simulation tools can benefit both SiPM users, e.g. for designing the best readout electronics, and SiPM designers, for assessing the impact of each parameter on the overall detection performance and electrical behavior

Non-line-of-sight imaging using a time-gated single photon avalanche diode

By using time-of-flight information encoded in multiply scattered light, it is possible to reconstruct images of objects hidden from the camera’s direct line of sight. Here, we present a non-line-of-sight imaging system that uses a single-pixel, single-photon avalanche diode (SPAD) to collect time-of-flight information. Compared to earlier systems, this modification provides significant improvements in terms of power requirements, form factor, cost, and reconstruction time, while maintaining a comparable time resolution. The potential for further size and cost reduction of this technology make this system a good base for developing a practical system that can be used in real world applications

Integrated Circuit for Subnanosecond Gating of InGaAs/InP SPAD

We present a novel integrated circuit for subnanosecond gating of InGaAs/InP single-photon avalanche diodes (SPADs). It enables the detector in well-defined time intervals (down to 500 ps) and strongly reduces the afterpulsing effect. It includes a fast pulser with rising/falling edge shorter than 300 ps (20%-80%), a wideband comparator and hold-off logic circuitry. The fast avalanche quenching reduces the charge flow in the SPAD, thus decreasing the afterpulsing, a detrimental effect that limits the maximum count rate of InGaAs/InP SPADs. The wideband SiGe comparator guarantees very low timing jitter of the acquired waveforms: <100 ps (FWHM) at 5 V excess bias voltage, when operated with InGaAs/InP SPAD, whereas we estimate that the time jitter of the circuit is < 30 ps