Size-dependent effects on electrical contacts to nanotubes and nanowires

Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain Ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of Q1D structures makes them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of Q1D materials.Comment: Physical Review Letters 97, 026804 (2006

A MEMS Light Modulator Based on Diffractive Nanohole Gratings

We present the design, fabrication, and testing of a microelectromechanical systems (MEMS) light modulator based on pixels patterned with periodic nanohole arrays. Flexure-suspended silicon pixels are patterned with a two dimensional array of 150 nm diameter nanoholes using nanoimprint lithography. A top glass plate assembled above the pixel array is used to provide a counter electrode for electrostatic actuation. The nanohole pattern is designed so that normally-incident light is coupled into an in-plane grating resonance, resulting in an optical stop-band at a desired wavelength. When the pixel is switched into contact with the top plate, the pixel becomes highly reflective. A 3:1 contrast ratio at the resonant wavelength is demonstrated for gratings patterned on bulk Si substrates. The switching time is 0.08 ms and the switching voltage is less than 15V

Exact expression of the impact broadening operator for hydrogen Stark broadening

International audienceAims. Recent measurements on the Stark broadening of radio recombination lines show values and trends in disagreement with conventional theories. Different attemps to explain those disagreements have not been successfull for any of the employed theoretical models. In particular, the impact model that describes well the physical conditions at which the studied broadenings occur, shows a functional trend upon the principal quantum number of the studied transitions that does not correspond to the experimental observations. Methods. High values of the principal quantum number require computable formulas for the calculation of transition probabilities. Some of those expressions have been published, leading to approximate formulas on the dependence of the line width versus the principal quantum number of the upper level of the transition. Results. In this work an exact expression for the hydrogen Stark width in the frame of impact approximation is given

Study of charge-charge coupling effects on dipole emitter relaxation within a classical electron-ion plasma description

Studies of charge-charge (ion-ion, ion-electron, and electron-electron) coupling properties for ion impurities in an electron gas and for a two component plasma are carried out on the basis of a regularized electron-ion potential without short-range Coulomb divergence. This work is motivated in part by questions arising from recent spectroscopic measurements revealing discrepancies with present theoretical descriptions. Many of the current radiative property models for plasmas include only single electron-emitter collisions and neglect some or all charge-charge interactions. A molecular dynamics simulation of dipole relaxation is proposed here to allow proper account of many electron-emitter interactions and all charge-charge couplings. As illustrations, molecular dynamics simulations are reported for the cases of a single ion imbedded in an electron plasma and for a two-component ion-electron plasma. Ion-ion, electron-ion, and electron-electron coupling effects are discussed for hydrogen-like Balmer alpha lines.Comment: 13 figures, submitted to Phys. Rev.

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts

Slow and fast micro-field components in warm and dense hydrogen plasmas

The aim of this work is the investigation of the statistical properties of local electric fields in an ion-electron two component plasmas for coupled conditions. The stochastic fields at a charged or at a neutral point in plasmas involve both slow and fast fluctuation characteristics. The statistical study of these local fields based on a direct time average is done for the first time. For warm and dense plasma conditions, typically $N_{e}\approx 10^{18}cm^{-3}$, $$, well controlled molecular dynamics (MD) simulations of neutral hydrogen, protons and electrons have been carried out. Relying on these \textit{ab initio} MD calculations this work focuses on an analysis of the concepts of statistically independent slow and fast local field components, based on the consideration of a time averaged electric field. Large differences are found between the results of these MD simulations and corresponding standard results based on static screened fields. The effects discussed are of importance for physical phenomena connected with stochastic electric field fluctuations, e.g., for spectral line broadening in dense plasmas.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes

A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the SWNT-ssDNA hybrid. Raman spectroscopy confirms the same change in electrical behavior. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.Comment: 13 pages, 6 figure

Enhanced inverse bremsstrahlung heating rates in a strong laser field

Test particle studies of electron scattering on ions, in an oscillatory electromagnetic field have shown that standard theoretical assumptions of small angle collisions and phase independent orbits are incorrect for electron trajectories with drift velocities smaller than quiver velocity amplitude. This leads to significant enhancement of the electron energy gain and the inverse bremsstrahlung heating rate in strong laser fields. Nonlinear processes such as Coulomb focusing and correlated collisions of electrons being brought back to the same ion by the oscillatory field are responsible for large angle, head-on scattering processes. The statistical importance of these trajectories has been examined for mono-energetic beam-like, Maxwellian and highly anisotropic electron distribution functions. A new scaling of the inverse bremsstrahlung heating rate with drift velocity and laser intensity is discussed.Comment: 12 pages, 12 figure