19 research outputs found

    Excited states in <sup>75</sup>As

    Full text link
    The gamma-ray spectrum of 75Se has been studied with a variety of Ge(Li) detectors. The energies and intensities of 15 lines have been accurately measured. Of these a 24.4 and 468.6 keV transition were substantiated for the first time in the gamma-ray spectrum. Ge(Li)–Ge(Li) coincidence measurements established the newly observed 24.4 keV transition. These experiments also substantiated the 80.8 keV transition (observed for the first time) deduced from electron conversion spectra. The accurate intensity values obtained in this work have been combined with proper literature data and conversion coefficients for various transitions have been determined. These data and recent half-life measurements of some excited states by other workers permitted us to calculate the transition rates in 75As. The data obtained indicate that the 198.6, 279.5, and 400.5 keV levels in 75As exhibit strong collective character, in contrast to the 264.6 keV level, which shows little influence of collective effects. </jats:p

    Simulations and Comparisons of Channeling Spectra in the p+28Si System in the Backscattering Geometry

    No full text
    A new method has recently been proposed for the simulation and analysis of channeling spectra in the backscattering geometry [1], based on reaction cross sections and the assumption that beam particles escape from the aligned direction at an exponential rate. The success of the method in the system p+28Si cut along the &lt;100&gt; plane [2] led to the investigation of more complicated crystal structures and beam-target combinations, namely a+MgO and a+A^Oa, which revealed the prospects as well as the limitations of the method [3]. In the present work channeling spectra of protons in a 28Si crystal cut along the &lt;111&gt; plane, in the energy region Ep = 1.7-2.4 MeV are studied and analyzed. The measured backscattering spectra are reproduced by computer simulations and an attempt is made to describe the differences between the &lt;100&gt; and the &lt;111&gt; axis in the silicon crystal and their subsequent effect on the stopping power of channeled protons. The results are compared with those of methods reported in the past at different energy regions of the incoming protons [4,5].</jats:p
    corecore