Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without} a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.Comment: 4 pages, 5 figure

Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make nonvolatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetoresistance of MTJs, how their properties change as a function of tunnel-barrier thickness and applied bias, and what are the magnitude and direction of the spin-transfer-torque vector induced by a tunnel current.Comment: 37 pages, 2 figures. Contribution to a collection of "Current Perspectives" articles on spin transfer torque now available in the Journal of Magnetism and Magnetic Material

Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices

Voltage Dependence of Spin Transfer Torque in Magnetic Tunnel Junctions

Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e. exchange coupling through the barrier between ferromagnetic electrodes is discussed.Comment: 5 pages,4 figure

Enhancing spin-transfer torque through the proximity of quantum well states

We predict that the spin-transfer, Ti,k, and fieldlike, Ti,_, components of the local spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The spin-mixing enhancement is due to the energetic proximity of majority and minority quantum well states (QWSs) of different quantum numbers within the bias window. The local-spin-torque enhancement is not associated with a corresponding enhancement of the spinpolarized currents. Ti,k exhibits a switch-on and switch-off steplike bias behavior when spin-polarized QWSs enter the bias window or exit the energy band, while Ti,_ changes sign between switch-on biases. The net T_ exhibits an anomalous angular behavior due to the bias interplay of the bilinear and biquadratic effective exchange couplings.Physical Review B 76(22), 224406. (2007)1098-012

Anomalous bias dependence of spin torque in magnetic tunnel junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to the interface, Tk, in magnetic tunnel junctions, which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal without a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.Physical Review Letters 97(23), 237205. (2006)0031-900

Spin-transfer torque in magnetic tunnel junctions

We present a theoretical study of the spin-transfer torque vector and the tunneling magnetoresistance (TMR) for symmetric magnetic tunnel junctions (MTJ) using the single-band tight-binding model and the nonequilibrium Keldysh formalism. We provide a comprehensive analysis of the effect of band filling and exchange splitting of the FM leads on the bias behavior of the spin-transfer component, Tk, in the plane containing the magnetizations of the two magnetic layers, and the fieldlike component, T_, perpendicular to this plane. We demonstrate that both components of the spin torque and the TMR can exhibit a wide range of interesting and unusual bias behavior. We show that Tk(V) satisfies an expression involving the difference in spin currents between the ferromagnetic (FM) and antiferromagnetic (AF) configurations, which is general and independent of the details of the electronic structure. The spin current for the FM (AF) alignment is shown to have a linear (quadratic) bias dependence, whose origin lies in the symmetric (asymmetric) nature of the barrier. On the other hand, the bias dependence of T_ is quadratic with d2T_/dV20, and it can change sign at finite bias. Finally, we show that the exchange splitting and band filling have a large effect on the bias dependence of the TMR.Physical Review B 79(17), 174416. (2009)1098-012

Financial Fraud Detection using Quantum Graph Neural Networks

Financial fraud detection is essential for preventing significant financial losses and maintaining the reputation of financial institutions. However, conventional methods of detecting financial fraud have limited effectiveness, necessitating the need for new approaches to improve detection rates. In this paper, we propose a novel approach for detecting financial fraud using Quantum Graph Neural Networks (QGNNs). QGNNs are a type of neural network that can process graph-structured data and leverage the power of Quantum Computing (QC) to perform computations more efficiently than classical neural networks. Our approach uses Variational Quantum Circuits (VQC) to enhance the performance of the QGNN. In order to evaluate the efficiency of our proposed method, we compared the performance of QGNNs to Classical Graph Neural Networks using a real-world financial fraud detection dataset. The results of our experiments showed that QGNNs achieved an AUC of $0.85$, which outperformed classical GNNs. Our research highlights the potential of QGNNs and suggests that QGNNs are a promising new approach for improving financial fraud detection.Comment: 15 pages, 18 figures, 4 table

Voltage Dependence of Spin Transfer Torque In Magnetic Tunnel Junctions

Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of nonequilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e., exchange coupling through the barrier between ferromagnetic electrodes is discussed.IEEE Transactions on Magnetics 44(11), 2543-2546. (2008)0018-946