Fusion System and group actions with abelian isotropy subgroups

Cataloged from PDF version of article.We prove that if a finite group G acts smoothly on a manifold M such that all the isotropy subgroups are abelian groups with rank ≤ k, then G acts freely and smoothly on M × double struk S signn1 ×... × double struk S signnk for some positive integers n1, ..., nk. We construct these actions using a recursive method, introduced in an earlier paper, that involves abstract fusion systems on finite groups. As another application of this method, we prove that every finite solvable group acts freely and smoothly on some product of spheres, with trivial action on homology. Copyright © Edinburgh Mathematical Society 2013

Aspect acquisition in Russian as the weaker language: evidence from a Turkish-Russian child

Aims and objectives/purpose/research questions: This study aims to contribute to the discussion about the weaker language development by examining the effect of restricted input and use on the acquisition of the morphological category of aspect in Russian by a Turkish–Russian bilingual child in a Turkish-dominant environment. The main goal the study pursues is to investigate whether the reduced input and restricted use of Russian, mainly through communication with a Russian-speaking mother, is still sufficient for monolingual-like acquisition of Russian aspect. Design/methodology/approach: This study is a longitudinal case study. Data and analysis: The main source of data collection is video and audio recordings. Twenty-five recordings are available. They cover the period of between two years and 11 months (2;11) and 4;0. First, the data is examined in terms of the availability of perfective and imperfective forms and meanings they (these forms) express in the Russian language. Then, we look into whether the data of the bilingual child is marked with deviations from the monolingual Russian data in terms of error rates and patterns. Findings/conclusions: The findings of the study suggest that despite the reduced input, the acquisition of Russian aspect in the Turkish-dominant environment follows the same pattern as a monolingual acquisition does. Originality, and significance/implications: The study contributes to the discussion about the weaker language development in bilingual contexts and adds to the growing body of research looking at the development of a particular language in a variety of different contexts

Controlling the charge transfer flow at the graphene/pyrene-nitrilotriacetic acid interface

The fabrication of highly efficient bio-organic nanoelectronic devices is still a challenge due to the difficulty in interfacing the biomolecular component to the organic counterparts. One of the ways to overcome this bottleneck is to add a self-assembled monolayer (SAM) in between the electrode and the biological material. The addition of a pyrene-nitrilotriacetic acid layer to a graphene metal electrode enhances the charge transfer within the device. Our theoretical calculations and electrochemical results show that the formation of a pyrene-nitrilotriacetic acid SAM enforces a direct electron transfer from graphene to the SAM, while the addition of the Ni2+ cation and imidazole reverses the charge transfer direction, allowing an atomic control of the electron flow, which is essential for a true working device. © 2018 The Royal Society of Chemistry

Design and Optimization of High-Speed Resonant Cavity Enhanced Schottky Photodiodes

Cataloged from PDF version of article.Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD’s with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD’s allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD’s, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs–AlAs–InGaAs RCE Schottky PD’s designed for 900-nm wavelength

100 GHz resonant cavity enhanced Schottky photodiodes

Cataloged from PDF version of article.Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated

High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

Cataloged from PDF version of article.Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30lm diameter devices exhibited leakage current below 3 fA under reverse bias up to 12V. True solar-blind operation was ensured with a sharp cut-off around 266 nm. Peak responsivity of 147mA/W was measured at 256 nm under 20 V reverse bias. A visible rejection more than 4 orders of magnitude was achieved. The thermally-limited detectivity of the devices was calculated as 1.8 · 1013 cmHz1/2W 1 . Temporal pulse response measurements of the solar-blind detectors resulted in fast pulses with high 3-dB bandwidths. The best devices had 53 ps pulse-width and 4.1GHz bandwidth. A bandwidth-efficiency product of 2.9GHz was achieved with the AlGaN Schottky photodiodes. (C) 2004 Elsevier Ltd. All rights reserve

High-Speed High Effiency Large Area Resonant Cavity Enhanced p-I-n Photodiodes for Multimode Fiber Communications

Cataloged from PDF version of article.In this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm

InGaAs-based high-performance p-i-n photodiodes

Cataloged from PDF version of article.In this letter, we have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz

Resonant cavity enhanced detectors embedded in photonic crystals

Cataloged from PDF version of article.We report a resonant cavity enhanced (RCE) detector built around a three-dimensional photonic band gap crystal. The RCE detector was built by placing a monopole antenna within the localized modes of planar and boxlike defectstructures. The enhanced electric field around these defectstructures were then measured by a microwave detector and a network analyzer. We measured a power enhancement factor of 3450 for planar cavity structures. A Fabry–Perot cavity model was used to understand and predict resonant cavity enhancement in this structure. The tuning bandwidth of the RCE detector extends from 10.5 to 12.8 GHz, which corresponds to the full photonic band gap by the crystal. These RCE detectors have increased sensitivity and efficiency when compared to conventional detectors, and can be used for various applications. © 1998 American Institute of Physic