Transfer of Graphene with Protective Oxide Layers

Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.Comment: 13 pgs, 13 figure

The Economic Impact of Connecticut's Information Technology Industry

information technology, economic impact, Tornqvist index

Analysis of the Expected Shortfall of Aggregate Dependent Risks

We consider d identically and continuously distributed dependent risks X 1, , Xd . Our main result is a theorem on the asymptotic behaviour of expected shortfall for the aggregate risks: there is a constant cd such that for large u we have . Moreover we study diversification effects in two dimensions, similar to our Value-at-Risk studies in [2

Levels of self-consistency in the GW approximation

We perform $GW$ calculations on atoms and diatomic molecules at different levels of self-consistency and investigate the effects of self-consistency on total energies, ionization potentials and on particle number conservation. We further propose a partially self-consistent $GW$ scheme in which we keep the correlation part of the self-energy fixed within the self-consistency cycle. This approximation is compared to the fully self-consistent $GW$ results and to the $G W_0$ and the $G_0W_0$ approximations. Total energies, ionization potentials and two-electron removal energies obtained with our partially self-consistent $GW$ approximation are in excellent agreement with fully self-consistent $GW$ results while requiring only a fraction of the computational effort. We also find that self-consistent and partially self-consistent schemes provide ionization energies of similar quality as the $G_0W_0$ values but yield better total energies and energy differences.Comment: 11 pages, 3 figures, 3 table