39 research outputs found
A Prospect Theory Justification for the 'Entire Market Value' Rule in Reasonable Royalties Calculations
Comment of the Global Antitrust Institute, George Mason University School of Law, on the Korea Fair Trade Commission's Revised Review Guidelines on Unfair Exercise of Intellectual Property Rights
Comment of the Global Antitrust Institute, George Mason University School of Law, on the Korea Fair Trade Commissionns Amendment to Its Review Guidelines on Unfair Exercise of Intellectual Property Rights
Patent Injunctions on Appeal: An Empirical Study of the Federal Circuit's Application of eBay
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Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE (low pressure Metalorganic Vapor Phase Epitaxy)
Nanometer scale GaAs Quantum Well Wire (QWW) arrays with lateral dimensions in the range of 10--70 nm and a period of 200 nm have been fabricated in the GaAs/AlGaAs system using x-ray nanolithography patterning and overgrowth by a low pressure Metalorganic Vapor Phase Epitaxy (LP-MOVPE) technique. The QWW structures were either fabricated by post-growth patterning of a thin GaAs film on a AlGaAs-coated substrate followed by AlGaAs deposition, or by continuous in-situ deposition of a GaAs/AlGaAs QWW structure on a prepatterned GaAs substrate. Although cross-sectional transmission electron microscopy showed no structural defects in either QWW fabrication process, photoluminescence (PL) was only observed in the in-situ-deposited structures. Strong polarization dependence of the PL peak with respect to wire orientation has been confirmed and evidence of lateral confinement was observed. 17 refs., 4 figs
