Disorder-induced magnetooscillations in bilayer graphene at high bias

Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.Comment: 5 pages, 2 figure

Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings.Comment: 9 pages, 5 figure

Nonequilibrium phenomena in high Landau levels

Developments in the physics of 2D electron systems during the last decade have revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance oscillations generated by the external forces that drive the electron system out of equilibrium. The rich set of dramatic phenomena of this kind, discovered in high mobility semiconductor nanostructures, includes, in particular, microwave radiation-induced resistance oscillations and zero-resistance states, as well as Hall field-induced resistance oscillations and associated zero-differential resistance states. We review the experimental manifestations of these phenomena and the unified theoretical framework for describing them in terms of a quantum kinetic equation. The survey contains also a thorough discussion of the magnetotransport properties of 2D electrons in the linear response regime, as well as an outlook on future directions, including related nonequilibrium phenomena in other 2D electron systems.Comment: 60 pages, 41 figure

Algorithm and program for calculating the facility’s power supply system based on photovoltaic modules

Abstract The popularity of renewable sources in design of the facility’s energy supply system is mainly due to their environmental safety. They are the sources of the so-called “clean energy”, the production of which is not accompanied by harmful emissions into the atmosphere. Renewable energy plants are complex systems with a large number of interconnected elements. Their design requires the solution of a number of problems, which include the selection of the functional, technical and technological structure of the system. The power plants components parameters depend on many factors, including the system’s installation location characteristics, the consumers operating mode features, the system components compatibility with each other. Design automation of power plants based on renewable sources will help reduce the workload on the designer during the system development, thereby will promote wider use of such sources in facility’s energy supply systems. In this work, the authors developed an algorithm and a program based on it for designing a facility’s power supply system with photovoltaic modules as an energy source. The program allows user to select the necessary system components based on databases; evaluate the system effectiveness depending on the facility location; calculate the selected power supply system cost. When simulating the system operation a check for the input data correctness is made to exclude possible errors.</jats:p