無機光吸収材料のプリンタブル太陽電池への応用

九州工業大学博士学位論文（要旨）学位記番号：生工博甲第279号 学位授与年月日：平成29年3月24

Investigation of Interfacial Charge Transfer in Solution Processed Cs2SnI6 Thin Films

Cesium tin halide based perovskite Cs2SnI6 has been subjected to in-depth investigations owing to its potentiality toward the realization of environment benign Pb free and stable solar cells. In spite of the fact that Cs2SnI6 has been successfully utilized as an efficient hole transport material owing to its p-type semiconducting nature, however, the nature of the majority carrier is still under debate. Therefore, intrinsic properties of Cs2SnI6 have been investigated in detail to explore its potentiality as light absorber along with facile electron and hole transport. A high absorption coefficient (5 × 104 cm–1) at 700 nm indicates the penetration depth of 700 nm light to be 0.2 μm, which is comparable to conventional Pb based solar cells. Preparation of pure and CsI impurity free dense thin films with controllable thicknesses of Cs2SnI6 by the solution processable method has been reported to be difficult owing to its poor solubility. An amicable solution to circumvent such problems of Cs2SnI6 has been provided utilizing spray-coating in combination with spin-coating. The presence of two emission peaks at 710 and 885 nm in the prepared Cs2SnI6 thin films indicated coexistence of quantum dot and bulk parts which were further supported by transmission electron microscopy (TEM) investigations. Time-resolved photoluminescence (PL) and transient absorption spectroscopy (TAS) were employed to investigate the excitation carrier lifetime, which revealed fast decay kinetics in the picoseconds (ps) to nanoseconds (ns) time domains. Time-resolved microwave photoconductivity decay (MPCD) measurement provided the mobile charge carrier lifetime exceeding 300 ns, which was also in agreement with the nanosecond transient absorption spectroscopy (ns-TAS) indicating slow charge decay lasting up to 20 μs. TA assisted interfacial charge transfer investigations utilizing Cs2SnI6 in combination with n-type PCBM and p-type P3HT exhibited both intrinsic electron and hole transport

Integrative approaches in HIV-1 non-nucleoside reverse transcriptase inhibitor design

The design of inhibitors for human immunodeficiency virus type-1 reverse transcriptase (HIV-1 RT) is one of the most successful approaches for the treatment of HIV infections. Among the HIV-1 RT inhibitors, non-nucleoside reverse transcriptase inhibitors (NNRTIs) constitute a prominent drug class, which includes nevirapine, delavirdine, efavirenz, etravirine, and rilpivirine approved for clinical use. However, the efficiency of many of these drugs has been undermined by drug-resistant variants of HIV-1 RT, and it therefore becomes inevitable to design novel drugs to cope with resistance. Here, we discuss various drug design strategies, which include traditional medicinal chemistry, computational chemistry, and chemical biology approaches. In particular, computational modeling approaches, including machine learning, empirical descriptors-based, force-field, ab initio, and hybrid quantum mechanics/molecular mechanics-based methods are discussed in detail. We foresee that these methods will have a major impact on efforts to guide the design and discovery of the next generation of NNRTIs that combat RT multidrug resistance.</p

Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route

The bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) is rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. A relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = ethyl xanthate) precursor. Colors of the obtained films clearly changed from orange to black when annealed from 80 to 120 °C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9