406 research outputs found

    Dominant parameters for the critical tunneling current in bilayer exciton condensates

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    We will discuss the relevant conditions to observe a critical tunneling current [New J. Phys. 10, 045018 (2008)] in electron double-layer systems at a total filling factor of 1 and find they are related to the effective layer separation and the temperature. Our studies suggest that the intensity of the critical tunneling behavior is also directly linked to the area of the sample.Comment: 6 pages, 4 figure

    Coupling of Josephson Currents in Quantum Hall Bilayers

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    We study ring shaped (Corbino) devices made of bilayer two-dimensional electron gases in the total filling factor one quantized Hall phase which is considered to be a coherent BCS-like state of interlayer excitons. Identical Josephson currents are observed at the two edges while only a negligible conductance between them is found. The maximum Josephson current observed at either edge can be controlled by passing a second interlayer Josephson current at the other edge. Due to the large electric resistance between the two edges, the interaction between them can only be mediated by the neutral interlayer excitonic groundstate

    Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

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    The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a high initial Ga purity, allowing to reach mobilities of 15 million (single interface) or 28 million cm2/Vseccm^2/Vsec (doped quantum wells) in our MBE systems. We discuss possible origins of the inconsistent Ga quality. Furthermore, we compare samples grown in different MBE systems over a period of several years and find that mobility and PL is correlated if similar structures and growth procedures are used

    Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers

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    The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current II is smaller than a critical ICI_C, tunneling is large and is effectively shorting the two layers. For I>ICI > I_C tunneling becomes negligible. Surprisingly, the transition between the two tunneling regimes has only a minor impact on the features of the filling-factor one state as observed in magneto-transport, but at currents exceeding ICI_C the resistance along the layers increases rapidly

    Coulomb Drag as a Probe of the Nature of Compressible States in a Magnetic Field

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    Magneto-drag reveals the nature of compressible states and the underlying interplay of disorder and interactions. At \nu=3/2 a clear T^{4/3} dependence is observed, which signifies the metallic nature of the N=0 Landau level. In contrast, drag in higher Landau levels reveals an additional contribution, which anomalously grows with decreasing T before turning to zero following a thermal activation law. The anomalous drag is discussed in terms of electron-hole asymmetry arising from disorder and localization, and the crossover to normal drag at high fields as due to screening of disorder.Comment: 5 pages, 4 figure

    Anomalous resistance overshoot in the integer quantum Hall effect

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    In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.Comment: 7 pages and 5 figure

    Activated Transport in the individual Layers that form the νT\nu_T=1 Exciton Condensate

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    We observe the total filling factor νT\nu_{T}=1 quantum Hall state in a bilayer two-dimensional electron system with virtually no tunnelling. We find thermally activated transport in the balanced system with a monotonic increase of the activation energy with decreasing d/Bd/\ell_B below 1.65. In the imbalanced system we find activated transport in each of the layers separately, yet the activation energies show a striking asymmetry around the balance point. This implies that the gap to charge-excitations in the {\em individual} layers is substantially different for positive and negative imbalance.Comment: 4 pages. 4 figure

    Electron spin resonance on a 2-dimensional electron gas in a single AlAs quantum well

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    Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic gg-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR amplitude and its temperature dependence suggest that the signal originates from the effective magnetic field caused by the spin orbit-interaction and a modulation of the electron wavevector caused by the microwave electric field. This contrasts markedly to conventional ESR that detects through the microwave magnetic field.Comment: 4 pages, 4 figure
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