AlN/GaN-based MOS-HEMT technology: processing and device results

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper

Slot-Ring Multiport Driven Antenna with Improved Airside Radiation for Terahertz Communications

A slot-ring multiport driven (MPD) antenna is evaluated for operation in the terahertz band with emphasis on air-side radiation on a thick Indium Phosphide (InP) substrate. Geometrical modification to the known slot-ring are made by employing a circular outer ground and a backing ground plane to focus the radiation in the airside direction. Optimization of the modified structure is made to find the optimal size of the upper ground plane. The optimal design achieves maximum directivity of 10.8 dB which is an improvement of 3 dB from the original design. Moreover, the radiation is directed in the airside direction with a front-to-back lobe ratio of 14 dB. The slot-ring antenna design is verified by fabrication at 5 GHz and achieves 10.2 dB directivity

Resonant tunnelling diode based high speed optoelectronic transmitters

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.European Commission [645369

A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment

We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs. We show that the oscillator operation can be described by Liénard's equation, a second order nonlinear differential equation, which is a generalization of the Van der Pol equation. This treatment gives considerable insight into the potential of a monolithic version of the circuit for optical communication functions including clock recovery and chaotic source applications

THz Electronics for Data Centre Wireless Links - the TERAPOD Project

This paper presents an overview of the terahertz (THz) resonant tunneling diode (RTD) technology that will be used as one of the approaches towards wireless data centres as envisioned on the eU H2020 TERAPOD project. We show an example 480 gm × 680 gm THz source chip at 300 GHz employing a 4 gm × 4 gm RTD device with 0.15 mW output power. We also show a basic laboratory wireless setup with this device in which up to 2.5 Gbps (limited by equipment) was demonstrated

Series coupled resonant tunneling diode oscillators for terahertz applications

A series of resonant tunneling diode oscillators with frequencies up to W-band and output power around one milliwatt are presented. To our knowledge, the 75.2 GHz RTD oscillator with -0.2 dBm output power is the highest power reported. The technique demonstrated here shows the great potential to scale up the design to terahertz frequencies. Jue Wang, Khalid Alharbi, Afesomeh Ofiare, Ata Khalid, Liquan Wang, David Cumming and Edward Wasig

IV Characteristics of a Stabilized Resonant Tunnelling Diodes

The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR regio

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT

A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices

Broadband Bow-Tie Slot Antenna with Tuning Stub for Resonant Tunnelling Diode Oscillators with Novel Configuration for Substrate Effects Suppression

Radiation from antennas integrated with InP-based resonant tunnelling diode (RTD) oscillators is usually degraded because of the effects of the large dielectric constant substrate. The common solution has been to use hemispherical lenses to extract the signal from the backside of the substrate. In this paper we present a broadband bow-tie slot antenna with tuning stub which is diced and mounted on a ground plane to alleviate the substrate effects. Here, the large dielectric constant substrate around the antenna conductor is removed. In addition, the ground plane underneath the diced substrate acts as a reflector and, ultimately, the antenna radiates to air-side direction. The antenna was designed and fabricated using photolithography techniques to offer wide bandwidth (return loss S11 <-10dB) between 200-350 GHz on semi-insulating InP substrate with dielectric constant of ϵr = 12.56. Simulated and measured bandwidth almost extends the frequency range 230-325 GHz. Simulations shows air-side radiation pattern, an antenna gain of around 11 dB at 290 GHz and 98% radiation efficiency

Diced and grounded broadband bow-tie antenna with tuning stub for resonant tunnelling diode terahertz oscillators

Radiation from antennas integrated with indium phosphide (InP)-based resonant tunnelling diode (RTD) oscillators is mainly through the substrate because of the effects of the large dielectric constant. Therefore, hemispherical lenses are used to extract the signal from the backside of the substrate. In this study the authors present a broadband bow-tie slot antenna with a tuning stub which is diced and mounted on a ground plane to alleviate the substrate effects. Here, the large dielectric constant substrate around the antenna conductor is removed. In addition, the ground plane underneath the diced substrate acts as a reflector and, ultimately, the antenna radiates to the air-side direction. Antenna integration with RTD oscillators is described in this study as well. Two-port bow-tie slot antennas were designed and characterised and showed the suitability of integration with power combining RTD oscillator circuits which are based on mutual coupling. The antennas were fabricated using electron beam lithography on a semi-insulating InP substrate. Simulated and measured bandwidth almost extends the entire frequency range 230–325  GHz. Simulations shows air-side radiation pattern and antenna gain of around 11  dB at 280  GHz. Simulations also show that the antenna may be fed with a 50-Ω or 30-Ω feed line, i.e. suitable feed lines, without compromising its performance which may prove beneficial for optimum loading of RTD oscillators