Fe-doping induced superconductivity in charge-density-wave system 1T-TaS2

We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of pseudogap/Mott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state for the samples with the moderate doping levels. The superconductivity strongly depends on $x$ within a narrow range, and the maximum superconducting transition temperature is 2.8 K as $x=0.02$. We propose that the induced superconductivity and CDW phases are separated in real space. For high doping level ($x>0.04$), the Anderson localization (AL) state appears, resulting in a large increase of resistivity. We present a complete electronic phase diagram of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ system that shows a dome-like $T_{c}(x)$

Energy use and carbon footprints differ dramatically for diverse wastewater-derived carbonaceous substrates: An integrated exploration of biokinetics and life-cycle assessment.

Published onlineJournal ArticleThis is the final version of the article. Available from Nature Publishing Group via the DOI in this record.Energy neutrality and reduction of carbon emissions are significant challenges to the enhanced sustainability of wastewater treatment plants (WWTPs). Harvesting energy from wastewater carbonaceous substrates can offset energy demands and enable net power generation; yet, there is limited research about how carbonaceous substrates influence energy and carbon implications of WWTPs with integrated energy recovery at systems-level. Consequently, this research uses biokinetics modelling and life cycle assessment philology to explore this notion, by tracing and assessing the quantitative flows of energy embodied or captured, and by exploring the carbon footprint throughout an energy-intensive activated sludge process with integrated energy recovery facilities. The results indicate that energy use and carbon footprint per cubic meter of wastewater treated, varies markedly with the carbon substrate. Compared with systems driven with proteins, carbohydrates or other short-chain fatty acids, systems fed with acetic acid realized energy neutrality with maximal net gain of power from methane combustion (0.198 kWh) and incineration of residual biosolids (0.153 kWh); and also achieved a negative carbon footprint (72.6 g CO2). The findings from this work help us to better understand and develop new technical schemes for improving the energy efficiency of WWTPs by repurposing the stream of carbon substrates across systems.We are grateful to the National Natural Science Foundation of China (No. 51408589) and Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016041) for their support

Vortex Phase Diagram of Layered Superconductor Cu0.03TaS2 for H || c

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu0.03TaS2 single crystal. A pronounced peak effect has been observed, indicating that the high quality and homogeneity are vital to peak effect. A kink has been observed in the magnetic field H dependence of the in-plane resistivity {\rho}ab for H || c, which corresponds to a transition from activated to diffusive behavior of vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity {\rho}ab shows {\rho}ab $\propto$ H0.3 relation, which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu0.03TaS2 for H || c is given.Comment: 28 pages, 9 figure

Anomalous thermoelectric effects of ZrTe5_{5} in and beyond the quantum limit

Thermoelectric effects are more sensitive and promising probes to topological properties of emergent materials, but much less addressed compared to other physical properties. Zirconium pentatelluride (ZrTe$_{5}$) has inspired active investigations recently because of its multiple topological nature. We study the thermoelectric effects of ZrTe$_{5}$ in a magnetic field and find several anomalous behaviors. The Nernst response has a steplike profile near zero field when the charge carriers are electrons only, suggesting the anomalous Nernst effect arising from a nontrivial profile of Berry curvature. Both the thermopower and Nernst signal exhibit exotic peaks in the strong-field quantum limit. At higher magnetic fields, the Nernst signal has a sign reversal at a critical field where the thermopower approaches to zero. We propose that these anomalous behaviors can be attributed to the Landau index inversion, which is resulted from the competition of the $\sqrt{B}$ dependence of the Dirac-type Landau bands and linear-$B$ dependence of the Zeeman energy ($B$ is the magnetic field). Our understanding to the anomalous thermoelectric properties in ZrTe$_{5}$ opens a new avenue for exploring Dirac physics in topological materials.Comment: 6 pages, 4 figure

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior

A survey of localization in wireless sensor network

Localization is one of the key techniques in wireless sensor network. The location estimation methods can be classified into target/source localization and node self-localization. In target localization, we mainly introduce the energy-based method. Then we investigate the node self-localization methods. Since the widespread adoption of the wireless sensor network, the localization methods are different in various applications. And there are several challenges in some special scenarios. In this paper, we present a comprehensive survey of these challenges: localization in non-line-of-sight, node selection criteria for localization in energy-constrained network, scheduling the sensor node to optimize the tradeoff between localization performance and energy consumption, cooperative node localization, and localization algorithm in heterogeneous network. Finally, we introduce the evaluation criteria for localization in wireless sensor network

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate

Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.Comment: 5 pages, 4 figures, 1 tabl

Gate-tuned normal and superconducting transport at the surface of a topological insulator

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulator.Comment: 28 pages, 5 figure