Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

Hole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp - 1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.published_or_final_versio

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.published_or_final_versio

Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD

A novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs0.92Sb0.08/GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation.published_or_final_versio

Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities > 10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. © 2004 American Institute of Physics.published_or_final_versio

Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

We have developed InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) with low turn-on voltage and high current gain by using a narrow energy bandgap GaAsSb layer as the base and an InGaP layer as the emitter. The current transport mechanism is examined by measuring both of the terminal currents in forward and reverse mode. The results show that the dominant current transport mechanism in the InGaP/GaAsSb/GaAs DHBTs is the transport of carriers across the base layer. This finding suggests that the bandgap offset produced by incorporating Sb composition into GaAs mainly appears on the valence band and the conduction-band offset in InGaP/GaAsSb heterojunction is very small. © 2004 American Institute of Physics.published_or_final_versio

A small synthetic molecule functions as a chloride–bicarbonate dual-transporter and induces chloride secretion in cells

A C2 symmetric small molecule composed of L-phenylalanine and isophthalamide was found to function as a Cl−/HCO3− dual transporter and self-assemble into chloride channels. In Ussing-chamber based short-circuit current measurements, this molecule elicited chloride-dependent short-circuit current (Isc) increase in both Calu-3 cell and CFBE41o-cell (with F508del mutant CFTR) monolayers.postprin

InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain

An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176V tower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.published_or_final_versio

Synthesis of new dendritic chiral binol ligands and their applications in enantioselective lewis acid catalyzed addition of diethylzinc to aldehydes

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Trace doping of multiple elements enables stable battery cycling of LiCoO2 at 4.6 V

LiCoO2 is a dominant cathode material for lithium-ion (Li-ion) batteries due to its high volumetric energy density, which could potentially be further improved by charging to high voltages. However, practical adoption of high-voltage charging is hindered by LiCoO2’s structural instability at the deeply delithiated state and the associated safety concerns. Here, we achieve stable cycling of LiCoO2 at 4.6 V (versus Li/Li+) through trace Ti–Mg–Al co-doping. Using state-of-the-art synchrotron X-ray imaging and spectroscopic techniques, we report the incorporation of Mg and Al into the LiCoO2 lattice, which inhibits the undesired phase transition at voltages above 4.5 V. We also show that, even in trace amounts, Ti segregates significantly at grain boundaries and on the surface, modifying the microstructure of the particles while stabilizing the surface oxygen at high voltages. These dopants contribute through different mechanisms and synergistically promote the cycle stability of LiCoO2 at 4.6 V

Structure-Induced Reversible Anionic Redox Activity in Na Layered Oxide Cathode

Anionic redox reaction (ARR) in lithium- and sodium-ion batteries is under hot discussion, mainly regarding how oxygen anion participates and to what extent oxygen can be reversibly oxidized and reduced. Here, a P3-type Na0.6[Li0.2Mn0.8]O2 with reversible capacity from pure ARR was studied. The interlayer O-O distance (peroxo-like O-O dimer, 2.506(3) Å), associated with oxidization of oxygen anions, was directly detected by using a neutron total scattering technique. Different from Li2RuO3 or Li2IrO3 with strong metal-oxygen (M-O) bonding, for P3-type Na0.6[Li0.2Mn0.8]O2 with relatively weak Mn-O covalent bonding, crystal structure factors might play an even more important role in stabilizing the oxidized species, as both Li and Mn ions are immobile in the structure and thus may inhibit the irreversible transformation of the oxidized species to O2 gas. Utilization of anionic redox reaction (ARR) on oxygen has been considered as an effective way to promote the charge-discharge capacity of the layered oxide cathodes for lithium- or sodium-ion batteries. The detailed mechanism of ARR, in particular how crystal structure affects and coordinates with the ARR, is not yet well understood. In the present work, a combination of X-ray and neutron total scattering measurements has been performed to study the structure of the prototype P3-type layered Na0.6[Li0.2Mn0.8]O2 with pure ARR. Unique structural characteristics, rather than prevailing knowledge of covalency of metal-oxygen, enable the stabilization of the crystal structure of Na0.6[Li0.2Mn0.8]O2 along with the ARR. This work suggests that reversible ARR can be manipulated by proper structure designs, thus to achieve high lithium or sodium storage in layered oxide cathodes. For P3-type Na0.6[Li0.2Mn0.8]O2 with relatively weak Mn-O covalent bonding, crystal structure factors play an important role in stabilizing the oxidized species, inhibiting the irreversible transformation of the oxidized species to O2 gas. The finding is important for better design of layered oxide positive materials with higher reversible capacity via the introduction of a reversible anionic redox reaction