41 research outputs found
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes with Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
© 1963-2012 IEEE.In this paper, Au/Ag-doped ZnO/polyvinyl pyrrolidone (PVP)/n-Si [metal-polymer-semiconductor (MPS)] Schottky Barrier Diodes (SBDs) were fabricated. The structural properties of the Ag-doped ZnO/PVP nanocomposites have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analyses. The XRD pattern indicated that the samples have high purity ZnO and Ag materials and have not observed other peaks. The mean crystallite size of nanoparticles was calculated using Debye-Scherer's equation and the measured sizes reveal clearly the formation of small nanocrystals. The SEM and EDX results show the sheetlike ZnO nanostructures and also confirm the presence of Zn, O, and Ag materials with the nonstoichiometric ratio. The values of ideality factor (n), zero-bias barrier height (ΦB0), and series resistance (RS) of the MPS-type SBD were obtained from both the thermionic emission (TE) and Cheung function and the observed some discrepancy between them was due to the voltage-dependent of these parameters and the nature of the calculation method. The value of surface states (Nss) was changed from 2.2 × 1013 eV-1 cm-2 at (Ec ? 0.44) eV to 8.19 × 1012 eV-1 cm-2 at (Ec ? 0.69) eV and these values are more suitable for the MPS-type SBD. The values of doping-donor atoms (ND), depletion layer width (WD), and φB [capacitancevoltage (C?V )] were obtained from the reverse bias C-2?V plot as a function of frequency. While the value of ND decreases with increasing frequency,WD increases almost as exponentially. However, there is a good relationship between φB (C?V ) and ln(f )
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
Facile ultrasound-assisted and microwave-assisted methods for preparation of Bi2S3-PVA nanostructures: exploring their pertinent structural and optical properties and comparative studies on the electrical, properties of Au/(Bi2S3-PVA)/n-Si Schottky structure
CORRELATION BETWEEN WETTABILITY AND OPTICAL PROPERTIES OF SILVER-BASED THIN FILMS PREPARED BY SPUTTERING METHOD WITH INCLINED SUBSTRATE AND SHADOWING EFFECT
In this work, various silver-based thin films were prepared by sputtering method with inclined substrates in the presence of shadowing object. The morphology and structural and optical properties of the prepared thin films were investigated by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS), respectively. The wettability of films was investigated by measuring contact angles of the films. The obtained results show that by increasing shadowing effect, a decrease in contact angle of the prepared samples is observed. Bruggeman homogenization simulation method was applied to describe the film structures. The theoretical part and simulation using Bruggeman homogenization confirm the experimental findings and show the best possible agreements. Finally, an increase in contact angle of the prepared thin films with high porosity and high surface roughness was observed. In films with silver–silver oxide compositions, the higher contribution of oxide part in the structure of the films leads to the hydrophilicity of the surface. </jats:p
