Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy

This paper reports the effect of the GaN coating layer on the optical properties of GaN epilayers grown on GaAs/Si(111). Almost crack free GaN epilayers are found to be grown when a thin (∼25 nm) GaN coating layer is inserted on 0.5 and 2 μm GaAs layers at 550 °C. Then nitridation of the GaAs layer is done through the coating layer by NH3 flow while the substrate temperature is ramped at 1000 °C for epilayer growth. An attempt has also been made by implementing an additional GaN interlayer at 800 °C while growth is continued for epilayer growth. For this growth strategy, cracks also happened without improvement of the epilayer quality. PL measurements show high excitonic peak energy and high excitonic to yellow band intensity ratio for GaN epilayers grown on the 0.5 μm GaAs converted layer (CL) using a thin GaN coating layer. Those values are also found to be comparable/ better than for epilayers grown on 2 μm CL

Superconductivity in undoped T' cuprates with Tc over 30 K

Undoped cuprates have long been considered to be antiferromagnetic insulators. In this article, however, we report that superconductivity is achieved in undoped T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd). Our discovery was performed by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives of which have not shown superconductivity so far, gets superconducting with Tconset as high as ~ 20 K. The implication of our discovery is briefly discussed.Comment: 22 pages, 5 figures, submitted to Physical Review Letter

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

This paper reports the reduced-stress GaN epitaxial growth on Si (1 1 1) using a porous GaN interlayer which is formed from GaAs layer by a novel nitridation process. Initially a 2 μm thick GaAs layer is grown on a Si(1 1 1) substrate by MBE. Then, a GaN buffer layer of 20 nm thick is grown on the GaAs layer at 550°C in a MOVPE reactor. The GaAs layer capped with the GaN buffer layer is annealed in NH3 to 1000°C. Through this process, a porous GaN layer is formed beneath the GaN cap layer. An epitaxial GaN layer is grown on the GaN buffer layer at 1000°C in the MOVPE reactor. The epitaxial layer grown on the porous-GaN/Si(1 1 1) structure is found to have no cracks on the surface. In contrast, an epitaxial layer grown on the GaAs layer nitrated without a cap layer many cracks are found in the epilayer and the layer is sometimes peeled off from the substrate. It is found that the surface morphology of the GaN/porous-GaN/Si(1 1 1) sample is markedly improved by employing a 40 nm-thick interlayer grown at 800°C in addition to the above processes. A PL spectrum with a high intensity ratio between the excitonic emission and the deep yellow emission is obtained for the GaN/porous-GaN/Si(1 1 1) sample. E2 peak position in Raman scattering spectrum also shows a reduced stress for the GaN epilayers grown on the porous-GaN/Si(1 1 1)

Molecular clouds toward three Spitzer bubbles S116, S117 and S118: Evidence for the cloud-cloud collision which formed the three \HII \ regions and a 10-pc scale molecular cavity

We carried out a molecular line study toward the three Spitzer bubbles S116, S117 and S118 which show active formation of high-mass stars. We found molecular gas consisting of two components with velocity difference of {$\sim 5$ \kms}. One of them, the small cloud, has typical velocity of {$-63$ \kms} \ and the other, the large cloud, has that of $-58$ \kms. The large cloud has a nearly circular intensity depression whose size is similar to the small cloud. We present an interpretation that the cavity was created by a collision between the two clouds and the collision compressed the gas into a dense layer elongated along the western rim of the small cloud. In this scenario, the O stars including those in the three Spitzer bubbles were formed in the interface layer compressed by the collision. By assuming that the relative motion of the clouds has a tilt of \timeform{45D} to the line of sight, we estimate that the collision continued over the last 1 Myr at relative velocity of $\sim$10 \kms. In the S116--117--118 system the \HII \ regions are located outside of the cavity. This morphology is ascribed to the density-bound distribution of the large cloud which made the \HII \ regions more easily expand toward the outer part of the large cloud than inside of the cavity. The present case proves that a cloud-cloud collision creates a cavity without an action of O star feedback, and suggests that the collision-compressed layer is highly filamentary.Comment: 23 pages, 10 figure

Axion-Dilatonic Conformal Anomaly from Ads/CFT Correspondence

We discuss general multidimensional axion-dilatonic AdS gravity which may correspond to bosonic sector of Gibbons-Green-Perry (compactified) IIB supergravity with RR-scalar (axion). Using AdS/CFT correspondence the 4d conformal anomaly on axion-dilaton-gravitational background is found from SG side. It is shown that for IIB SG with axion such conformal anomaly coincides with the one obtained from QFT calculation in ${\cal N}=4$ super Yang-Mills theory conformally coupled with ${\cal N}=4$ conformal SG. Brief discussion on possibility to apply these results for gauged SGs is also presented.Comment: LaTeX file, 10 page

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Electrochemical etching behavior of n-type GaN films grown on sapphire has been studied under UV (λ=325 nm) light illumination. As the cases for photoelectrochemical etching of n-type GaAs and InP, three different features appear on etched n-GaN surfaces depending on current density for etching; a high density (10^10 cm^<-2>) of tree-like protrusions at a lower c-urrent density, a relatively flat surface at an intermediate current density, and peeling of the film from the substrate at a higher current density. From the shape and the density of tree-like protrusions, in addition to the analogy of these results with those for n-type GaAs and InP, it is reasonable to conclude that tree-like protrusions formed at a low current density are due to threading dislocations involved in n-GaN films. Thus, the photoelectrochemical etching is found to become a convenient method to detect dislocations in n-type III nitride materials