Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2490

Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode

The zinc oxide (ZnO) and poly(3,4-ethylenedioxythiophene) bis-poly(ethyleneglycol) (PEDOT:PEG) films were deposited on p-Si substrate by sputter and spin coating methods, respectively. An organic/inorganic heterojunction diode having PEDOT:PEG/ZnO on p-Si substrate was fabricated. The barrier height (BH) and the ideality factor values for the device were found to be 0.82 ± 0.01 eV and 1.9 ± 0.01, respectively. It has been seen that the value of BH is significantly larger than those of conventional Au/p-Si metal–semiconductor contacts. The PEDOT:PEG/ZnO/p-Si heterostructure exhibits a non-ideal I–V behavior with the ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The modified Norde\u27s function combined with conventional forward I–V method was used to extract the parameters including the barrier height and series resistance. At the same time, the physical properties of ZnO and PEDOT:PEG films deposited by sputter and spin coating technique, respectively, were investigated at room temperature. The obtained results indicate that the electrical parameters of the diode are affected by structural properties of ZnO film and PEDOT:PEG organic film

Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. <br> We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. <br> We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs

An experimental optimization study for concentration and laser power effects in the fullerene-C60 and azo dye doped guest-host liquid crystal systems

The current-voltage characteristics of a famous guest-host liquid crystal system have been investigated under dark and laser illumination conditions. Dependency of current modulation with respect to concentration and laser power gives some optimization possibilities and estimations on the reorientation mechanisms of the liquid crystals. The current-voltage character of pure E7 is almost unchanged with laser pumping, while the fullerene and dye doping are enhancing effects in their individual and collective usage. The negative resistance effect was observed for some certain concentrations of the dye and C-60, and this peculiarity is shown to be switched with laser illumination. The mobility of the doped LC samples was calculated by transient current measurements and its dependency on the dye concentration and the laser power was investigated. It is evaluated that the effect of methyl red is a critical parameter in photoconductivity applications of liquid crystals. (c) 2009 Elsevier B.V. All rights reserve

Dielectric Properties of Calcium Phosphate Ceramics

Calcium phosphate ceramics with various Ca/P ratios of 1, 2, 3, 4 and 8 were synthesized via sol-gel route. The effects of Ca/P molar ratio on structural, morphological, dielectric and antimicrobial properties were investigated in detail using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy and dielectric measurements. The Ca/P molar ratio significantly affects the crystal structure and phase composition. The crystallite size, lattice parameters and volume of the unit cell were remarkably affected by the change in the Ca/P molar ratio. The microstructure is changed with increasing the Ca/P molar ratio. The relative permittivity and alternating current conductivity gradually decrease for the samples having the Ca/P ratios higher than 2. The dielectric loss decreases gradually with the increase of the molar ratio of Ca/P.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7222</p

Silicon based photodetector with Ru(II) complexes organic interlayer

In present work, the electrical properties and illumination effects were investigated for the silicon based photodetector with organic Ru(II) complexes interfacial layer. The current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements were analyzed to determine electrical and photoelectrical properties under dark and different solar light intensity conditions. The reverse bias current values under light conditions were higher than dark conditions, and this situation demonstrates that the fabricated device displays a photo conducting behavior. Besides, some crucial electrical parameters such as series resistance, barrier height and ideality factor values of prepared device were calculated by using current-voltage measurements. The ideality factor and barrier height values of fabricated device were calculated as 9.42 and 0.59 for dark condition. Besides to these experiments, transient photocurrent and photo-capacitance/conductance were also investigated under different light conditions. It was determined from transient measurements that the fabricated device has a high sensitivity to light. The photoresponse of the diode was determined to be around 4479 +/- 1.9 under 100 mW/cm(2 )illumination. The examined C/G-V characteristics of the fabricated device strongly depend on voltage and frequency. The analyzed results suggest that the fabricated Al/Ru(II) complexes/p-Si/Al device can be used in rapidly developing optoelectronic applications, especially for the organic materials-based photodetector technology.Scientific and Technical Research Council of Turkey (TUBITAK) [114Z439]; King Khalid University under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/00718]; ELAZIG KOSGEB provincial Directorate of Small and Medium Enterprises Develeopment Organization of TURKEYThis research has been partially supported by the Scientific and Technical Research Council of Turkey (TUBITAK) (Project no: 114Z439). Authors would like to acknowledge the support of King Khalid University for this research through a grant RCAMS/KKU/00718 under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia. This study also was supported by ELAZIG KOSGEB provincial Directorate of Small and Medium Enterprises Develeopment Organization of TURKEY

Sn1-xBixO2 and Sn1-xTaxO2 (0 \leq x \leq 0.75): A first-principles study

The structural, elastic, electronic and optical (x = 0) properties of doped Sn1-xBixO2 and Sn1-xTaxO2 (0 \leq x \leq 0.75) are studied by using the first-principles pseudopotential plane-wave method within the local density approximation. The independent elastic constants Cij and other elastic parameters of these compounds have been calculated for the first time. The mechanical stability of the compounds with different doping concentrations has also been studied. The electronic band structure and density of states are calculated and the effect of doping on these properties is also analyzed. It is seen that the band gap of the undoped compound narrowed with dopant concentration which disappeared for x = 0.26 for Bi doping and 0.36 for Ta doping. The materials thus become conductive oxides through the change in the electronic properties of the compound for x \leq 0.75 which may be useful for potential application. The calculated optical properties, e.g. dielectric function, refractive index, absorption spectrum, loss-function, reflectivity and conductivity of the undoped SnO2 in two polarization directions are compared with both previous calculations and measurements. Keywords: Doped SnO2; First-principles; Mechanical properties; Electronic band structure; Optical properties.Comment: 10 pages, 5 figures, added 10 more references, comparison with mearements mad

A kinetic study of mercury(II) transport through a membrane assisted by new transport reagent

Background: A new organodithiophosphorus derivative, namely O-(1,3-Bispiperidino-2-propyl)-4-methoxy phenyldithiophosphonate, was synthesized and then the kinetic behavior of the transport process as a function of concentration, temperature, stirring rate and solvents was investigated.Results: The compound 1 was characterized by elemental analysis, IR, H-1 and P-31 NMR spectroscopies. The transport of mercury(II) ion by a zwitterionic dithiophosphonate 1 in the liquid membrane was studied and the kinetic behavior of the transport process as a function of concentration, temperature, stirring rate and solvents was investigated. The compound 1 is expected to serve as a model liquid membrane transport with mercury(II) ions.Conclusion: A kinetic study of mercury(II) transport through a membrane assisted by O-(1,3-Bispiperidino-2-propyl)4-methoxy phenyldithiophosphonate was performed. It can be concluded that the compound 1 can be provided a general and straightforward route to remove toxic metals ions such as mercury(II) ion from water or other solution