105,812 research outputs found

    States of Local Moment Induced by Nonmagnetic Impurities in Cuprate Superconductors

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    By using a model Hamiltonian with d-wave superconductivity and competing antiferromagnetic (AF) orders, the local staggered magnetization distribution due to nonmagnetic impurities in cuprate superconductors is investigated. From this, the net magnetic moment induced by a single or double impurities can be obtained. We show that the net moment induced by a single impurity corresponds to a local spin with S_z=0, or 1/2 depending on the strength of the AF interaction and the impurity scattering. When two impurities are placed at the nearest neighboring sites, the net moment is always zero. For two unitary impurities at the next nearest neighboring sites, and at sites separated by a Cu-ion site, the induced net moment has S_z=0, or 1/2, or 1. The consequence of these results on experiments will be discussed.Comment: 4 pages, 4 figure

    Strain-induced energy band gap opening in two-dimensional bilayered silicon film

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    This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are optimized by using both the local-density approximation and generalized gradient approximation. In the absence of strain/stress, five buckled hexagonal honeycomb structures of the bilayered silicon film have been obtained as local energy minima and their structural stability has been verified. These structures present a Dirac-cone shaped energy band diagram with zero energy band gaps. Applying tensile biaxial strain leads to a reduction of the buckling height. Atomically flat structures with zero bucking height have been observed when the AA-stacking structures are under a critical biaxial strain. Increase of the strain between 10.7% ~ 15.4% results in a band-gap opening with a maximum energy band gap opening of ~168.0 meV obtained when 14.3% strain is applied. Energy band diagram, electron transmission efficiency, and the charge transport property are calculated.Comment: 18 pages, 5 figures, 1 tabl

    Fluctuation-Exchange Study of Antiferromagnetism in Electron-Doped Cuprate Superconductors with Disorder

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    On the basis of the Hubbard model, we extend the fluctuation-exchange (FLEX) approach to investigating the properties of antiferromagnetic (AF) phase in electron-doped cuprate superconductors. Furthermore, by incorporating the effect of scatterings due to the disordered dopant-atoms into the FLEX formalism, our numerical results show that the antiferromagnetic transition temperature, the onset temperature of pseudogap due to spin fluctuations, the spectral density of the single particle near the Fermi surface, and the staggered magnetization in the AF phase as a function of electron doping can consistently account for the experimental measurements.Comment: 4 pages, 5 figure

    Possible Broken Inversion and Time-Reversal Symmetry State of Electrons in Bilayer Graphene

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    With the two-band continuum model, we study the broken inversion and time-reversal symmetry state of electrons with finite-range repulsive interactions in bilayer graphene. With the analytical solution to the mean-field Hamiltonian, we obtain the electronic spectra. The ground state is gapped. In the presence of the magnetic field BB, the energy gap grows with increasing BB, in excellently agreement with the experimental observation. Such an energy gap behavior originates from the disappearance of a Landau level of nn = 0 and 1 states. The present result resolves explicitly the puzzle of the gap dependence of BB.Comment: 4.4 pages, 3 figure

    Absence of broken inversion symmetry phase of electrons in bilayer graphene under charge density fluctuations

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    On a lattice model, we study the possibility of existence of gapped broken inversion symmetry phase (GBISP) of electrons with long-range Coulomb interaction in bilayer graphene using both self-consistent Hartree-Fock approximation (SCHFA) and the renormalized-ring-diagram approximation (RRDA). RRDA takes into account the charge-density fluctuations beyond the mean field. While GBISP at low temperature and low carrier concentration is predicted by SCHFA, we show here the state can be destroyed by the charge-density fluctuations. We also present a numerical algorithm for calculating the self-energy of electrons with the singular long-range Coulomb interaction on the lattice model.Comment: 8 pages, 6 figure

    Study of two-dimensional electron systems in the renormalized-ring-diagram approximation

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    With a super-high-efficient numerical algorithm, we are able to self-consistently calculate the Green's function in the renormalized-ring-diagram approximation for a two-dimensional electron system with long-range Coulomb interactions. The obtained ground-state energy is found to be in excellent agreement with that of the Monte Carlo simulation. The numerical results of the self-energy, the effective mass, the distribution function, and the renormalization factor of the Green's function for the coupling constants in the range 0rs300 \le r_s \le 30 are also presented.Comment: 4 pages, 5 figure
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