Coherent State Control of Non-Interacting Quantum Entanglement

We exploit a novel approximation scheme to obtain a new and compact formula for the parameters underlying coherent-state control of the evolution of a pair of entangled two-level systems. It is appropriate for long times and for relatively strong external quantum control via coherent state irradiation. We take account of both discrete-state and continuous-variable degrees of freedom. The formula predicts the relative heights of entanglement revivals and their timing and duration.Comment: Published in PRA, 10 pages, 7 figure

Phonon decoherence of quantum entanglement: Robust and fragile states

We study the robustness and fragility of entanglement of open quantum systems in some exactly solvable models in which the decoherence is caused by a pure dephasing process. In particular, for the toy models presented in this paper, we identify two different time scales, one is responsible for local dephasing, while the other is for entanglement decay. For a class of fragile entangled states defined in this paper, we find that the entanglement of two qubits, as measured by concurrence, decays faster asymptotically than the quantum dephasing of an individual qubit.Comment: 11 pages, revtex, no figure

Novel valley depolarization dynamics and valley Hall effect of exciton in mono- and bilayer MoS2_2

We investigate the valley depolarization dynamics and valley Hall effect of exciton due to the electron-hole exchange interaction in mono- and bilayer MoS$_2$ by solving the kinetic spin Bloch equations. The effect of the exciton energy spectra by the electron-hole exchange interaction is explicitly considered. For the valley depolarization dynamics, in the monolayer MoS$_2$, it is found that in the strong scattering regime, the conventional motional narrowing picture is no longer valid, and a novel valley depolarization channel is opened. For the valley Hall effect of exciton, in both the mono- and bilayer MoS$_2$, with the exciton equally pumped in the K and K' valleys, the system can evolve into the equilibrium state where the valley polarization is parallel to the effective magnetic field due to the exchange interaction. With the drift of this equilibrium state by applied uniaxial strain, the exchange interaction can induce the {\it momentum-dependent} valley/photoluminesence polarization, which leads to the valley/photoluminesence Hall current. Specifically, the disorder strength dependence of the valley Hall conductivity is revealed. In the strong scattering regime, the valley Hall conductivity decreases with the increase of the disorder strength; whereas in the weak scattering regime, it saturates to a constant, which can be much larger than the one in Fermi system due to the absence of the Pauli blocking.Comment: 14 pages, 7 figure

Modeling with structure of resins in electonic compornents

In recent years, interfacial fracture becomes one of the most important problems in the assessment of reliability of electronics packaging. Especially, underfill resin is used with solder joints in flip chip packaging for preventing the thermal fatigue fracture in solder joints. In general, the interfacial strength has been evaluated on the basis of interfacial fracture mechanics concept. However, as the size of devices decrease, it is difficult to evaluate the interfacial strength quantitatively. Most of researches in the interfacial fracture were conducted on the basis of the assumption of the perfectly bonding condition though the interface has the micro-scale structure and the bonding is often imperfect. In this study, the mechanical model of the interfacial structure of resin in electronic components was proposed. Bimaterial model with the imperfect bonding condition was examined by using a finite element analysis (FEA). Stress field in the vicinity of interface depends on the interfacial structure with the imperfect bonding. In the front of interfacial crack tip, the behavior of process zone is affected by interfacial structure. However, the instability of fracture for macroscopic crack which means the fracture toughness is governed by the stress intensity factor based on the fracture mechanics concept.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions