Universal Relations for a Fermi Gas Close to a p-Wave Interaction Resonance

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Experimental studies of thorium ions implantation from pulse laser plasma into thin silicon oxide layers

We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and SiO2/Si(001) sample. Laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with YAG:Nd3+ laser having the pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. Depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of X-ray photoelectron spectroscopy (XPS) and Reflected Electron Energy Loss Spectroscopy (REELS) methods. Analysis of chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on local concentration of thorium atoms, the experimentally established band gaps were located in the range of 6.0 - 9.0 eV. Theoretical studies of optical properties of the SiO2 and ThO2 crystalline systems have been performed by ab initio calculations within hybrid functional. Optical properties of the SiO2/ThO2 composite were interpreted on the basis of Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in "hot" laser plasma at the early stages of expansion has been performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in 229Th isotope with energy of 7.8(0.5) eV

Superfluidity of "dirty" indirect excitons and magnetoexcitons in two-dimensional trap

The superfluid phase transition of bosons in a two-dimensional (2D) system with disorder and an external parabolic potential is studied. The theory is applied to experiments on indirect excitons in coupled quantum wells. The random field is allowed to be large compared to the dipole-dipole repulsion between excitons. The slope of the external parabolic trap is assumed to change slowly enough to apply the local density approximation (LDA) for the superfluid density, which allows us to calculate the Kosterlitz-Thouless temperature $T_{c}(n(r))$ at each local point $r$ of the trap. The superfluid phase occurs around the center of the trap ($\mathbf{r}=0$) with the normal phase outside this area. As temperature increases, the superfluid area shrinks and disappears at temperature $T_{c}(n(r=0))$. Disorder acts to deplete the condensate; the minimal total number of excitons for which superfluidity exists increases with disorder at fixed temperature. If the disorder is large enough, it can destroy the superfluid entirely. The effect of magnetic field is also calculated for the case of indirect excitons. In a strong magnetic field $H$, the superfluid component decreases, primarily due to the change of the exciton effective mass.Comment: 13 pages, 3 figure

Electronic structure of GaAs1-xNx alloy by soft-X-ray absorption and emission: Origin of the reduced optical efficiency

The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a charge transfer from the N atoms at the valence band maximum, reducing the overlap with the wavefunction in conduction band minimum, as the main factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, a k-conserving process of resonant inelastic x-ray scattering involving the L1 derived valence and conduction states is discovered.Comment: 3 pages, physica status solidi (Rapid Research Notes), in pres

Features of the implementation of information functions in linear indiction machine with opposite direction travelling magnetic field

The article deals with problems and prospects of linear induction machines with the primary, establishing the opposite direction travelling magnetic field. Such type of electrical machines primary windings structure is described.В статье рассмотрены проблемы и перспективы применения линейных индукционных машин с индуктором, создающим встречнобегущие магнитные поля. Приведены рекомендации по выбору структуры обмоток таких машин

Magnetically tunable properties related with carriers density in self-doped La1−xMnO3/y wt %Nb-SrTiO3 heteroepitaxial junctions

The self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3 (y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser deposition method. The current-voltage loops of junction were measured at several fixed magnetic fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and annealing time on the magnetically tunable property of the junction. The results show that these junctions have a typical temperature-dependent rectifying characteristics and asymmetrical hysteresis. The magnetically tunable property of the junction was related with the annealing time for the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal. In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a large magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.published_or_final_versio

Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling

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Studying of engineering of the emulsion containing rape oil

The influence of consumption of E and A vitamins, essential oil of a lemon and the heat treatment’s duration on properties and on resistance to oxidation of rape oil emulsion was researched. The resistance to oxidation is estimated with numbers of peroxide and acid and quantity of malondialdehyde. It’s shown that addition of 0.1g A and E vitamins or 0.15 g essential oil of a lemon for 50 g emulsion decreases the quantity of acid products and reduced the acid accumulation during heat treatment. The emulsions containing emulsifying bases of Lipoderm 4/1, the refined deodorized rape oil, tsetilpalmitat, water and antioxidants meets to STB 1673-2006 requirements