A new tapered semiconductor laser with integrated multimode interference coupler

A new tapered semiconductor laser with an integrated multimode interference coupler is presented in this paper. The seed source of the new laser is a multimode interference coupler semiconductor laser, which overcomes the limitations imposed by the relationship between single mode output and gain medium volume in the ridged waveguide region. The simulation results show that the multi-mode interference coupler can effectively provide a spatial single-mode seed light source for the tapered output waveguide, and the tapered output waveguide of the tapered semiconductor laser can also effectively reduce the optical power density of the output laser, which verifies the feasibility of the design scheme and provides a new idea for the design of high beam quality and high power tapered semiconductor laser

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor industry compatible technique for the in situ growth of patterned graphene directly onto GaN LED epiwafers for transparent heat-spreading electrode application is introduced. Pre-patterned sacrificial Co acts as both an etching mask for the GaN mesa and a catalyst for graphene growth. The Co helps in catalyzing the hydrocarbon decomposition and the subsequent graphitization, and is removed by wet etching afterwards. The use of plasma enhancement in the graphene chemical vapor deposition reduces the growth temperature to as low as 600 °C and improves the graphene quality, where highly crystalline graphene can be obtained in just 2 min of deposition. This method reduces the exposure of the GaN epilayers to high temperature to its limit, avoiding the well-known GaN decomposition and In segregation problems. Importantly, it can directly pattern the graphene without using additional lithographic steps and in doing so avoids any unintentional deleterious doping and damage of graphene from contact with the photoresist. The approach simplifies the fabrication and enables mass production by eliminating the bottlenecks of graphene transfer and patterning procedures. By comparing the GaN LEDs with and without graphene, we find that graphene greatly improves the device optical, electrical and thermal performances, due to the high optical transparency (91.74%) and high heat spreading capability of the graphene electrode. Unlike transferred graphene, this method is intrinsically scalable, reproducible, and compatible with the planar process, and is beneficial to the industrialization of GaN-graphene optoelectronic devices, where the integrated graphene serves as a superior sustainable and functional substitute to other transparent conducting materials such as ITO.<br/

In Situ Measurements of the Mechanical Properties of Electrochemically Deposited Li₂CO₃ and Li₂O Nanorods

Solid-electrolyte interface (SEI) is “the most important but least understood (component) in rechargeable Li-ion batteries”. The ideal SEI requires high elastic strength and can resist the penetration of a Li dendrite mechanically, which is vital for inhibiting the dendrite growth in lithium batteries. Even though Li$_{2}$CO$_{3}$ and Li$_{2}$O are identified as the major components of SEI, their mechanical properties are not well understood. Herein, SEI-related materials such as Li$_{2}$CO$_{3}$ and Li$_{2}$O were electrochemically deposited using an environmental transmission electron microscopy (ETEM), and their mechanical properties were assessed by in situ atomic force microscopy (AFM) and inverse finite element simulations. Both Li$_{2}$CO$_{3}$ and Li$_{2}$O exhibit nanocrystalline structures and good plasticity. The ultimate strength of Li$_{2}$CO$_{3}$ ranges from 192 to 330 MPa, while that of Li$_{2}$O is less than 100 MPa. These results provide a new understanding of the SEI and its related dendritic problems in lithium batteries

Tunable luminescence and energy transfer of a Eu²⁺/Mn²⁺ co-doped Sr₃NaY(PO₄)₃F phosphor for white LEDs

A series of single-phase and color-tunable Sr3NaY(PO4)3F:Eu2+, Mn2+ phosphors have been successfully prepared via the solid-state reaction.</p