Down-Regulation of MiR-150 Alleviates Inflammatory Injury Induced by Interleukin 1 via Targeting Kruppel-Like Factor 2 in Human Chondrogenic Cells

Background/Aims: Interleukin-1 (IL-1) is known to be involved in cartilage degeneration following joint injury or due to osteoarthritis. In the present study, we explored the effects of miR-150 on IL-1-stimulated human chondrogenic cells ATDC5. Methods: ATDC5 cells were transfected with the mimic, inhibitor or negative controls specific for miR-150, and subsequently treated by IL-1. CCK8 assay, PI and FITC-conjugated Annexin V double-staining, Western blot, qRT-PCR and ELISA assay were performed to determine the changes of cell viability, apoptosis, and the release of pro-inflammatory cytokines. Targeting relationship between miR-150 and KLF2 was detected by dual luciferase activity assay. Results: IL-1 reduced cell viability, induced apoptosis, and enhanced the expression and release of pro-inflammatory cytokines (IL-6, IL-8 and TNF-α) in ATDC5 cells. IL-1 also increased the expression of miR-150. Suppression of miR-150 alleviated IL-1-induced cell damage in ATDC5 cells, while overexpression of miR-150 resulted in an opposite impact. KLF2 was negatively regulated by miR-150, and it was proved as a target gene of miR-150. KLF2 overexpression exhibited protective actions in IL-1-injured ATDC5 cells, even if miR-150 was suppressed in cell. Moreover, IL-1-induced activation of NF-kB and Notch pathways was alleviated by KLF2 overexpression. Conclusions: Suppression of miR-150 led to up-regulation of KLF2, which in turn protected ATDC5 cells against IL-1-induced injury

Frequency dependence on polarization switching measurement in ferroelectric capacitors

Abstract Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P r) and coercive field (E c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (&gt;1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films. </jats:p

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO₃ films

(Gd, Ni) codoped BiFeO3 (BGFNO) film exhibits robust ferroelectricity, which leads to excellent resistive switching behavior.</jats:p

Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO₃

Bi1−xNdxFe0.99Mn0.01O3 (BNFMO, x = 0.00~0.20) films were epitaxially grown on Nb:SrTiO3 (001) substrates using pulsed laser deposition. It was found that the Nd-doping concentration has a great impact on the surface morphology, crystal structure, and electrical properties. BNFMO thin film with low Nd-doping concentration (≤16%) crystallizes into a rhombohedral structure, while the high Nd-doping (>16%) will lead to the formation of an orthogonal structure. Furthermore, to eliminate the resistive switching (RS) effect, a positive-up–negative-down (PUND) measurement was applied on two devices in series. The remnant polarization experiences an increase with the Nd-doping concentration increasing to 16%, then drops down with the further increased concentration of Nd. Finally, the ferroelectric photovoltaic effect is also regulated by the ferroelectric polarization, and the maximum photocurrent of 1758 μA/cm2 was obtained in Bi0.84Nd0.16Fe0.99Mn0.01O3 thin film. BNFMO films show great potential for ferroelectric and photovoltaic applications

Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3

Bi1−xNdxFe0.99Mn0.01O3 (BNFMO, x = 0.00~0.20) films were epitaxially grown on Nb:SrTiO3 (001) substrates using pulsed laser deposition. It was found that the Nd-doping concentration has a great impact on the surface morphology, crystal structure, and electrical properties. BNFMO thin film with low Nd-doping concentration (≤16%) crystallizes into a rhombohedral structure, while the high Nd-doping (&gt;16%) will lead to the formation of an orthogonal structure. Furthermore, to eliminate the resistive switching (RS) effect, a positive-up–negative-down (PUND) measurement was applied on two devices in series. The remnant polarization experiences an increase with the Nd-doping concentration increasing to 16%, then drops down with the further increased concentration of Nd. Finally, the ferroelectric photovoltaic effect is also regulated by the ferroelectric polarization, and the maximum photocurrent of 1758 μA/cm2 was obtained in Bi0.84Nd0.16Fe0.99Mn0.01O3 thin film. BNFMO films show great potential for ferroelectric and photovoltaic applications.</jats:p

Flexible Wearable Electronics: Present State and Future Development

Wearable electronics are expected to be light, durable, flexible, and comfortable. Many fibrous, planar and tridimensional structures have been designed to realize flexible devices that can sustain geometrical deformations, such as bending, twisting, folding, and stretching normally at ambient conditions. As a flexible electrode for batteries or other devices, it possess favorable mechanical strength and large specific capacity and preserve efficient ionic and electronic conductivity with a certain shape, structure and function. To fulfill flexible energy-storage devices, much effort has been devoted to design of structures and materials with mechanical characteristics. This review attempts to critically review the state‐of‐arts with respect to materials, and structural design of devices as well as applications of the wearable electronic products. Finally, discussion present regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.</jats:p