When the River Leaves Its Bed: Analyzing Deviations between Planned and Actual Interaction Structures in IT Change Processes

There is ample evidence of deviations between the actual and planned interaction structures between a firm\u27s IT department and business units. Such deviations can hinder senior managers from governing their IT organizations effectively because they do not know how work really gets done. This paper develops an explanation for why actual structures differ from planned structures. Understanding this phenomenon is indispensable for managers to govern the real organization, to uphold compliance with important standards (e.g., ITIL, COBIT), to decide whether the formal or the actual organization is more effective, and, finally, to identify management actions that support the optimal structure. To develop this understanding, we analyze the interaction structures at the interface between firms’ business units and IT units in four rich cases, using data from 56 interviews and 47 questionnaires, and applying qualitative methods and social network analysis, which give us deep insights into planned and actual interaction among employees. We test two different explanations for deviations of actual from planned interaction structures and find that boundary-spanning theory provides the dominant explanation for such deviations: Inclined to span the business/IT boundary most effectively, the actors involved deviate from planned structures especially when other structures offer better boundary-spanning potential, which is influenced primarily by cross-domain knowledge. In addition, relationships also play an important role. On the positive side, relationships provide opportunities for such deviations, while on the negative side, a conflict-laden relationship might hinder deviations even if they were advantageous

The Effect of Social Network Structures at the Business/IT Interface on IT Application Change Effectiveness

The challenge of managing the relationship between a firm\u27s business and IT in order to derive business value from IT is an important topic on researchers’ and practitioners’ agendas. The focus of most related research and management actions has been on the top management or project management levels. However, conflicts frequently arise within the line organization when applications are extended, enhanced, maintained, or otherwise changed operationally outside software development projects. This study focuses on the impact of relationships at the application-change level and strives to identify and explain favorable social structures for effective business/IT dialog at the operational level. We collected data in seven comprehensive case studies, including 88 interviews and corresponding surveys, and applied social network analysis to show that three social structures at the implementation level influence the degree to which IT applications are maintained and enhanced in line with business requirements: (1) interface actors connecting business and IT, (2) the relationships between interface actors and the corresponding unit, and (3) the relationships between interface actors and other employees in their unit. In three cases, less favorable structures are revealed that correspond to low application change effectiveness and software applications that do not meet business requirements. The other cases benefit from favorable social structures and thus enhance fulfillment of business requirements and result in higher IT business value. This paper contributes to IS research by helping to explain why companies may not provide favorable IT services despite favorable relationships at the top management level and successful application development projects

Ion-beam-induced reconstruction of amorphous GaN

Wurtzite GaN can be rendered amorphous by high-dose heavy-ion bombardment. We show here that relatively low-dose reirradiation of such amorphous GaN (a-GaN) with MeV light ions can significantly change some of the physical properties of a-GaN. In particular, light-ion reirradiation of a-GaN results in (i) an increase in material density, (ii) the suppression of complete decomposition during postimplantation annealing, (iii) a significant increase in the values of hardness and Young's modulus, and (iv) an apparent decrease in the absorption of visible light. Transmission electronmicroscopy shows that a-GaN remains completely amorphous after light-ion reirradiation. Therefore, we attribute the above effects of light-ion reirradiation to an ion-beam-induced atomic-level reconstruction of the amorphous phase. Results indicate that electronic energy loss of light ions is responsible for the changes in the mechanical properties and for the suppression of thermally induced decomposition of a-GaN. However, the changes in the density of a-GaN appear to be controlled by the nuclear energy loss of light ions

Implantation doping of GaN

Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

Millimeter-wave signal generation using an integrated mode-locked semiconductor laser and photodiode

A compact optoelectronic integrated circuit for generation of mm-wave frequencies is demonstrated. A monolithically integrated semiconductor ring laser, optical amplifier and waveguide photodiode are used to generate electrical signals up to 85.2 GHz

Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at {approximately}1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N{sub 2}/NH{sub 3} ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

Photonic integrated circuit for all-optical millimeter-wave signal generation

Generation of millimeter-wave electronic signals and power is required for high-frequency communication links, RADAR, remote sensing and other applications. However, in the 30 to 300 GHz mm-wave regime, signal sources are bulky and inefficient. All-optical generation of mm-wave signals promises to improve efficiency to as much as 30 to 50 percent with output power as high as 100 mW. All of this may be achieved while taking advantage of the benefits of monolithic integration to reduce the overall size to that of a single semiconductor chip only a fraction of a square centimeter in size. This report summarizes the development of the first monolithically integrated all-optical mm-wave signal generator ever built. The design integrates a mode-locked semiconductor ring diode laser with an optical amplifier and high-speed photodetector into a single optical integrated circuit. Frequency generation is demonstrated at 30, 60 and 90 Ghz

Complementary HFET technology for wireless digital and microwave applications

Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. Digital CHFET technology with independently optimizable transistors has been shown to operate with 319 ps loaded gate delays at 8.9 fJ. Power consumption is dominated by leakage currents of the p-channel FET, while performance is determined by the characteristics of 0.7 {mu}m gate length devices. As a microwave technology, the nJFET forms the basis of low-power cirucitry without any modification to the digital process. Narrow band amplification with a 0.7x100 {mu}m nJFET has been demonstrated at 2.1-2.4 GHz with gains of 8-10 dB at 1 mW power. These amplifiers showed a minimum noise figure of 2.5 dB. Next generation CHFET transistors with sub 0.5 {mu}m gate lengths have also been developed. Cutoff frequencies of 49 and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 {mu}m gates, respectively. These FETs will enable enhancements in both digital and microwave circuits