Quantum orientational melting of mesoscopic clusters

By path integral Monte Carlo simulations we study the phase diagram of two - dimensional mesoscopic clusters formed by electrons in a semiconductor quantum dot or by indirect magnetoexcitons in double quantum dots. At zero (or sufficiently small) temperature, as quantum fluctuations of particles increase, two types of quantum disordering phenomena take place: first, at small values of quantum de Boer parameter q < 0.01 one can observe a transition from a completely ordered state to that in which different shells of the cluster, being internally ordered, are orientationally disordered relative to each other. At much greater strengths of quantum fluctuations, at q=0.1, the transition to a disordered (superfluid for the boson system) state takes place.Comment: 4 pages, 6 Postscript figure

Optical excitations of a self assembled artificial ion

By use of magneto-photoluminescence spectroscopy we demonstrate bias controlled single-electron charging of a single quantum dot. Neutral, single, and double charged excitons are identified in the optical spectra. At high magnetic fields one Zeeman component of the single charged exciton is found to be quenched, which is attributed to the competing effects of tunneling and spin-flip processes. Our experimental data are in good agreement with theoretical model calculations for situations where the spatial extent of the hole wave functions is smaller as compared to the electron wave functions.Comment: to be published in Physical Review B (rapid communication

Optical properties of arrays of quantum dots with internal disorder

Optical properties of large arrays of isolated quantum dots are discussed in order to interpret the existent photoluminescence data. The presented theory explains the large observed shift between the lowest emission and absorption energies as the average distance between the ground and first excited states of the dots. The lineshape of the spectra is calculated for the case when the fluctuations of the energy levels in quantum dots are due to the alloy composition fluctuations. The calculated lineshape is in good agreement with the experimental data. The influence of fluctuations of the shape of quantum dots on the photoluminescence spectra is also discussed.Comment: 7 pages (twocolumn) LATEX, 6 Postscript figure

Sn delta-doping in GaAs

We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.Comment: 11 pages text (ps), 9 figures (ps), submitted to Semicon. Science Tech

Coulomb matrix elements of bilayers of confined charge carriers with arbitrary spatial separation

We describe a practical procedure to calculate the Coulomb matrix elements of 2D spatially separated and confined charge carriers, which are needed for detailed theoretical descriptions of important condensed matter finite systems. We derive an analytical expression, for arbitrary separations, in terms of a single infinite series and apply a u-type Levin transform in order to accelerate the resulting infinite series. This procedure has proven to be efficient and accurate. Direct consequences concerning the functional dependence of the matrix elements on the separation distance, transition amplitudes and the diagonalization of a single electron-hole pair in vertically stacked parabolic quantum dots are presented.Comment: 8 page

Resonant nature of phonon-induced damping of Rabi oscillations in quantum dots

Optically controlled coherent dynamics of charge (excitonic) degrees of freedom in a semiconductor quantum dot under the influence of lattice dynamics (phonons) is discussed theoretically. We show that the dynamics of the lattice response in the strongly non-linear regime is governed by a semiclassical resonance between the phonon modes and the optically driven dynamics. We stress on the importance of the stability of intermediate states for the truly coherent control.Comment: 4 pages, 2 figures; final version; moderate changes, new titl

Experimental realization of the one qubit Deutsch-Jozsa algorithm in a quantum dot

We perform quantum interference experiments on a single self-assembled semiconductor quantum dot. The presence or absence of a single exciton in the dot provides a qubit that we control with femtosecond time resolution. We combine a set of quantum operations to realize the single-qubit Deutsch-Jozsa algorithm. The results show the feasibility of single qubit quantum logic in a semiconductor quantum dot using ultrafast optical control.Comment: REVTex4, 4 pages, 3 figures. Now includes more details about the dephasing in the quantum dots. The introduction has been reworded for clarity. Minor readability fixe

Spin-based all-optical quantum computation with quantum dots: understanding and suppressing decoherence

We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read-out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects, and evaluate quantitatively its fidelity

Tunable Indistinguishable Photons From Remote Quantum Dots

Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV. We report that by embedding the quantum dots in a quantum well heterostructure the vertical field that can be applied is increased by over an order of magnitude whilst preserving the narrow linewidths, high internal quantum efficiencies and familiar emission spectra. Individual dots can then be continuously tuned to the same energy allowing for two-photon interference between remote, independent, quantum dots

The Aharonov-Bohm effect for an exciton

We study theoretically the exciton absorption on a ring shreded by a magnetic flux. For the case when the attraction between electron and hole is short-ranged we get an exact solution of the problem. We demonstrate that, despite the electrical neutrality of the exciton, both the spectral position of the exciton peak in the absorption, and the corresponding oscillator strength oscillate with magnetic flux with a period $\Phi_0$---the universal flux quantum. The origin of the effect is the finite probability for electron and hole, created by a photon at the same point, to tunnel in the opposite directions and meet each other on the opposite side of the ring.Comment: 13 RevTeX 3.0 pages plus 4 EPS-figures, changes include updated references and an improved chapter on possible experimental realization