Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

The CIS115 is a Teledyne-e2v CMOS image sensor with 1504 × 2000 pixels of 7 μm pitch. It has a high optical quantum efficiency owing to a multi-layer anti-reflective coating and its backside illuminated construction, and low dark current due to its pinned photodiode 4T pixel architecture. The sensor operates in rolling shutter mode with a frame rate of up to 7.5 fps (if using the whole array), and has a low readout noise of ~5 electrons rms. The CIS115 has been selected for use within the JANUS instrument, which is a high resolution camera due to launch on board ESA's JUpiter ICy moons Explorer (JUICE) spacecraft in 2022. After an interplanetary transit time of over 7 years, JUICE will spend 3.5 years touring the Jovian system, studying three of the Galilean moons in particular: Ganymede, Callisto and Europa. During this latter part of the mission, the spacecraft and hence the CIS115 sensor will be subjected to the significant levels of trapped radiation surrounding Jupiter. Gamma and proton irradiation campaigns have therefore been undertaken in order to evaluate both ionising and non-ionising dose effects on the CIS115's dark current performance. Characterisations were carried out at expected mission operating temperatures (−35 ± 10oC) both prior to and post-irradiation. Models of the resulting degradation in dark current behaviour will be combined with expected doses during the JUICE mission in order to predict the performance of the CIS115 at the mission end-of-lif

Development of in-situ trap characterisation techniques for EMCCDs

The "trap pumping" technique has seen considerable use over recent years as a means to probe the intrinsic properties of silicon defects that can impact charge transfer performance within CCD-based technologies. While the theory behind the technique is reasonably well understood, it has to date only been applied to relatively simple pixel designs where the motion of charge between pixel phases is fairly easy to predict. For some devices, the intrinsic pixel architecture is more complex and can consist of unequal phase sizes and additional implants that deform the electronic potential. Here, we present the implementation of the trap pumping technique for the CCD201-20, a 2-phase Teledyne e2v EMCCD. Clocking schemes are presented that can provide the location of silicon defects to sub-micron resolution. Experimental techniques that allow determination of trap energy levels and emission cross sections are presented. These are then implemented on an irradiated CCD201-20 to determine the energy level and emission cross section for defects thought to be the double acceptor state of the silicon divacancy (VV--) and carbon-phosphorus (CiPs) pairs. An improvement in charge transfer performance through optimised parallel clock delay is demonstrated and found to correlate with the properties of defects found using the trap pumping technique

Development of in-situ trap characterisation techniques for EMCCDs

The "trap pumping" technique has seen considerable use over recent years as a means to probe the intrinsic properties of silicon defects that can impact charge transfer performance within CCD-based technologies. While the theory behind the technique is reasonably well understood, it has to date only been applied to relatively simple pixel designs where the motion of charge between pixel phases is fairly easy to predict. For some devices, the intrinsic pixel architecture is more complex and can consist of unequal phase sizes and additional implants that deform the electronic potential. Here, we present the implementation of the trap pumping technique for the CCD201-20, a 2-phase Teledyne e2v EMCCD. Clocking schemes are presented that can provide the location of silicon defects to sub-micron resolution. Experimental techniques that allow determination of trap energy levels and emission cross sections are presented. These are then implemented on an irradiated CCD201-20 to determine the energy level and emission cross section for defects thought to be the double acceptor state of the silicon divacancy (VV--) and carbon-phosphorus (CiPs) pairs. An improvement in charge transfer performance through optimised parallel clock delay is demonstrated and found to correlate with the properties of defects found using the trap pumping technique