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8 research outputs found

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Author: Debdeep Jena
Huili Grace Xing
Kazuki Nomoto
null Bo Song
null Meng Qi
null Mingda Zhu
null Xiaodong Yan
null Yu Cao
null Zongyang Hu
Publication venue: Institute of Electrical and Electronics Engineers (IEEE)
Publication date: 01/01/2016
Field of study

Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene

Author: Chuanxin Lian
Gregory V. Hartland
Huili Xing
Kristof Tahy
Libai Huang
null Luxmi
Randall M. Feenstra
Publication venue: SPIE
Publication date: 01/01/2010
Field of study

First demonstration of two-dimensional WS<inf>2</inf> transistors exhibiting 10<sup>5</sup> room temperature modulation and ambipolar behavior

Author: Alan Seabaugh
Debdeep Jena
Kristof Tahy
Maja Remskar
null Huili Xing
null Soo Doo Chae
null Wan Sik Hwang
Rusen Yan
Vladimir Protasenko
Publication venue: IEEE
Publication date: 01/06/2012
Field of study

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

Author: Andrew Ketterson
Debdeep Jena
Gregory Snider
Huili Xing
null Yong Tang
Patrick Fay
Paul Saunier
Ronghua Wang
Shiping Guo
Xiang Gao
Publication venue: IEEE
Publication date: 01/12/2010
Field of study

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

Author: Chuanxin Lian
Gregory V. Hartland
Huili Xing
Kristof Tahy
Li-Qiang Chu
Libai Huang
null Luxmi
Randall M. Feenstra
Publication venue: American Chemical Society (ACS)
Publication date: 08/03/2010
Field of study

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Author: B. Sensale-Rodriguez
D. Jena
G. Snider
J. Verma
null Guowang Li
null Huili Xing
null Jia Guo
null Ronghua Wang
null Tian Fang
null Yu Cao
null Zongyang Hu
O. Laboutin
P. Fay
W. Johnson
Publication venue: Institute of Electrical and Electronics Engineers (IEEE)
Publication date: 01/09/2011
Field of study

Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with f<inf>T</inf> near 200 GHz

Author: A. Ketterson
B. Sensale-Rodriguez
D. Jena
G. Snider
M. Schuette
null Guowang Li
null Huili Xing
null Jia Guo
null Ronghua Wang
null Shiping Guo
null Tian Fang
null Xiang Gao
null Yu Cao
O. Laboutin
P. Fay
P. Saunier
W. Johnson
Publication venue: IEEE
Publication date: 01/12/2011
Field of study

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 &#x03BC;A/&#x03BC;m at V<inf>DS</inf> &#x003D; 0.5 V

Author: A. Seabaugh
H. Zhu
J.-M Kuo
M. Qi
M. Wistey
null Guangle Zhou
null Huili Xing
P. Fay
Q. Zhang
R. Li
S. Chae
T. Kosel
T. Vasen
Y. Lu
Publication venue: IEEE
Publication date: 01/12/2012
Field of study

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